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Aluminum-silicon/aluminum-silicon carbide composite material, preparation method thereof and electronic packaging device

A technology of aluminum silicon carbide and composite materials, applied in chemical instruments and methods, metal material coating technology, circuits, etc., can solve problems such as weld instability and achieve the effect of improving stability

Inactive Publication Date: 2014-08-06
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an aluminum-silicon / aluminum-silicon carbide composite material and its preparation method, and an electronic packaging device, so as to solve the technical problem of unstable welding seam when the electronic packaging shell and the cover plate are welded by laser in the prior art

Method used

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  • Aluminum-silicon/aluminum-silicon carbide composite material, preparation method thereof and electronic packaging device
  • Aluminum-silicon/aluminum-silicon carbide composite material, preparation method thereof and electronic packaging device
  • Aluminum-silicon/aluminum-silicon carbide composite material, preparation method thereof and electronic packaging device

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preparation example Construction

[0041] Another invention of the present invention also provides the preparation method of composite material, comprises the following steps:

[0042] 1) Put the aluminum-silicon material layer prepared by spray deposition on the top surface of the silicon carbide preform to obtain the composite preform 731, put the composite preform into a mold and preheat at a constant temperature of 550°C to 650°C for 2 hours to 3 hours Hour;

[0043] 2) melting the aluminum alloy to obtain liquid aluminum 742;

[0044] 3) After evacuating, fill with inert gas to a constant temperature and pressure of 1.5MPa-2.0MPa for 5 minutes to 15 minutes, then lower the temperature and pressurize to 8MPa-12MPa to obtain an aluminum-silicon / aluminum-silicon carbide composite material.

[0045] The method is carried out by means of a vacuum pressure infiltration furnace. Vacuum pressure infiltration furnace structure see Figure 5 , The vacuum pressure infiltration furnace includes a furnace body 70 an...

Embodiment 1

[0070] 1) Preparation of silicon carbide preforms

[0071] Weigh 70 g of silicon carbide particles A (average particle size: 80 μm), 30 g of silicon carbide particles B (average particle size: 14 μm), 20 g of polyvinyl alcohol solution, and 4.5 g of aluminum dihydrogen phosphate, and mix them with a stirring kneader for 1 hour to prepare granules, under the pressure of 100MPa, the silicon carbide green blank with the size of 105mm×74mm×10mm was made into a silicon carbide green body, and the silicon carbide preform was obtained after the speed was increased to 800℃ at a rate of 3°C / min for 1.5 hours, and the density was 2.07g / cm 3 . A 96mm×74mm×1mm groove is machined on a 105mm×74mm plane by CNC milling.

[0072] 2) Preparation of laser welding layer

[0073] The commercially available spray-deposited aluminum-silicon material (after testing, the mass percent content of silicon is 48%, the average particle size of silicon particles is about 90 μm, and the oxygen content is...

Embodiment 2

[0086] 1) Preparation of silicon carbide preform

[0087] Weigh 68g of silicon carbide particles A (average particle size: 80 μm), 32 g of silicon carbide particles B (average particle size: 14 μm), 20 g of polyvinyl alcohol solution, and 4.5 g of aluminum dihydrogen phosphate, and mix them with a stirring kneader for 1 hour to prepare Granules, pressurized under a pressure of 100MPa to form a silicon carbide green body with a size of 120mm×85mm×11mm, and sintered at a constant temperature of 800℃ for 1.5 hours at a rate of 3°C / min to obtain a silicon carbide preform with a density of 2.15g / cm 3 . A 110mm×85mm×1.2mm groove is machined on a 120mm×85mm plane by CNC milling.

[0088] 2) Preparation of laser welding layer

[0089] The commercially available spray-deposited aluminum-silicon material (the mass percent content of silicon is 50%, the average particle size of silicon particles is about 80 μm, and the oxygen content is 800×10 -6 ) into a sheet material of 109.4mm×8...

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Abstract

The invention provides an aluminum-silicon / aluminum-silicon carbide composite material, a preparation method thereof and an electronic packaging device. The aluminum-silicon / aluminum-silicon carbide composite material comprises a laser welding layer and an aluminum-silicon carbide layer, wherein the laser welding layer is positioned on the upper surface layer of the aluminum-silicon carbide layer; and the laser welding layer is an aluminum-silicon material formed by spray deposition. The composite material provided by the invention is characterized in that the surface layer of the aluminum-silicon carbide material is synchronously integrated with the spray deposition aluminum-silicon layer having the favorable laser welding characteristic. Since the oxygen content of the aluminum-silicon material layer obtained by spray deposition is no more than 1000*10<-6>, silicon-phase particles are small in particle size and are mutually connected to form a net, thereby improving the stability of a laser welding seam of the obtained composite material, and ensuring that the composite material can meet the requirements of a microcircuit module case material.

Description

technical field [0001] The invention relates to the field of electronic packaging, in particular to an aluminum-silicon / aluminum-silicon carbide composite material, a preparation method thereof, and an electronic packaging device. Background technique [0002] The materials used in the packaging of the microcircuit assembly shell must meet the requirements of high thermal conductivity, low density, expansion coefficient and low-temperature co-fired ceramics, good mechanical properties and processing characteristics, and good laser welding characteristics. Body reliability is guaranteed. At the same time, the deformation of the shell bottom plate of the microcircuit assembly shell during the production process shall not be greater than 0.10mm. At present, the casing packaging material mainly adopts aluminum alloy, copper alloy, Kovar alloy, W / Cu alloy and other materials. However, the expansion coefficient of aluminum alloy and copper alloy is too high, the density of Kovar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/12B32B15/01H01L23/08
Inventor 白书欣熊德赣李顺赵恂张虹万红
Owner NAT UNIV OF DEFENSE TECH