Irradiation bias system based on static random access memory (SRAM)
A static random and memory technology, applied in the field of irradiation bias system, can solve problems such as poor signal integrity and complex composition structure, achieve the effect of light system, simple operation, and solve signal integrity problems
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[0028] Embodiments of the present invention provide a bias system capable of applying excitation to SRAM devices in a radiation environment, the structure of which is as follows figure 1 As shown, it mainly includes the following modules:
[0029] Irradiation circuit module 1: composed of an irradiation circuit board and an adapter seat carrying SRAM devices;
[0030] Stimulus output module 2: composed of data processing module, error display module, write-read control module and program download module;
[0031] Data processing module 3: It is composed of Altera company's field programmable gate array model EP1C3T100I6, which is used to control the read and write operations and data exchange of the SRAM device in the irradiation;
[0032] Error display module 4: composed of a diode array and a resistor array, used to display the working status of the bias device and the SRAM;
[0033] Write and read control module 5: composed of switch arrays, each switch is connected to th...
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