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Irradiation bias system based on static random access memory (SRAM)

A static random and memory technology, applied in the field of irradiation bias system, can solve problems such as poor signal integrity and complex composition structure, achieve the effect of light system, simple operation, and solve signal integrity problems

Inactive Publication Date: 2014-08-06
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention integrates the functions of the previous system, and improves its complex structure, not only greatly improving the problems of poor signal integrity and troublesome operation in the existing system, but also simulating the real situation of SRAM devices working in the space radiation environment , the in-depth study of the radiation damage mechanism of SRAM is of great significance

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  • Irradiation bias system based on static random access memory (SRAM)
  • Irradiation bias system based on static random access memory (SRAM)
  • Irradiation bias system based on static random access memory (SRAM)

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Embodiment Construction

[0028] Embodiments of the present invention provide a bias system capable of applying excitation to SRAM devices in a radiation environment, the structure of which is as follows figure 1 As shown, it mainly includes the following modules:

[0029] Irradiation circuit module 1: composed of an irradiation circuit board and an adapter seat carrying SRAM devices;

[0030] Stimulus output module 2: composed of data processing module, error display module, write-read control module and program download module;

[0031] Data processing module 3: It is composed of Altera company's field programmable gate array model EP1C3T100I6, which is used to control the read and write operations and data exchange of the SRAM device in the irradiation;

[0032] Error display module 4: composed of a diode array and a resistor array, used to display the working status of the bias device and the SRAM;

[0033] Write and read control module 5: composed of switch arrays, each switch is connected to th...

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Abstract

The invention relates to an irradiation bias system based on a static random access memory (SRAM). The system consists of an irradiation circuit module, an excitation output module, a data processing module, an error display module, a read-write control module, a download configuration module, a precise power supply and a lead shielding room. According to the irradiation bias system, a flash memory is taken as a data carrier, and a field programmable gate array (FPGA) is taken as a control center, so that the irradiation bias system can independently work in an off-line way. After a lead shielding method is adopted, signal stimulus needed by read operation and write operation is directly provided for the SRAM in a source of radiation, so that the true working circumstance of the SRAM in the space radiation environment is simulated, and the irradiation bias system has significance for the intensive study of the radiation damage mechanism of the SRAM. Furthermore, the configuration of signals at an output port is changed according to the requirements, so that the irradiation bias system is suitable for irradiation experiments of the existing SRAMs with all models. The defects that the existing structure is complicated, the signals of the system are poor in integrity, and the operation is troublesome can be overcome.

Description

technical field [0001] The invention relates to an irradiation biasing system based on a static random access memory, which belongs to the biasing of a space radiation environment simulation experiment, and in particular relates to the biasing of a static random access memory in an irradiation experiment and the detection of its storage function. Background technique [0002] SRAM is widely used in the control systems of spacecraft and satellites due to its low power consumption and fast access speed. Its reliability will directly determine the normal operation and service life of spacecraft and satellites in orbit. However, there are a large number of high-energy radiation particles in the space environment, and their action on the SRAM will cause serious degradation of its working performance, such as: noise margin reduction, power consumption current increase, etc. In order to simulate the real working conditions of SRAM devices in the space radiation environment and deep...

Claims

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Application Information

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IPC IPC(8): G11C29/56
Inventor 余学峰丛忠超郭旗崔江维郑齐文孙静周航汪波
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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