Ion implantation apparatus and ion implantation method

Abstract

The invention provides an ion implantation device and an ion implantation method. The ion implantation method comprises the steps that before the ion is implanted, a wafer on a carrier platform is fixed; an ion generating cavity and a first deviating unit are started; the ion generating cavity generates an ion beam which impacts a Faraday cup after penetrating through the first deviating unit, and the Faraday cup detects the attribute of the ion beam; if the attribute of the ion beam meets the requirement, a second deviating unit is started; the ion beam deviates in the second deviating unit and leaves the second deviating unit to impact to the wafer; the deviating angle of the ion beam is controlled by controlling the force, exerted on the ion beam, of the second deviating unit, and therefore the ion beam can do up-and-down movement scanning on the wafer; in the whole ion implantation process, the carrier platform does not act at all. According to the ion implantation device and the ion implantation method, the maintaining cost of the carrier platform is reduced, the effect on the vacuum degree of a craft cavity is reduced, particles can be prevented from being generated on the wafer, the responding speed is improved, and the technological quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an ion implantation device and an ion implantation method using the ion implantation device. Background technique [0002] Ion implantation is an indispensable process in the field of semiconductor manufacturing. see figure 1 , figure 1 It is a schematic diagram of the moving direction of the ion beam and the moving direction of the slide table in the existing ion implantation process; wherein, i00 indicates the mechanical group structure at the bottom of the slide table, i1 indicates the ion generation chamber, i2 indicates the wafer, and i3 indicates the slide table , i4 represents an ion beam, a Faraday cup (not shown in the figure), and a dotted arrow represents that the wafer i2 is moved up and down by the stage i3. In the existing ion implantation method, the carrier table is moved up and down without changing the moving direction of the ion beam to realize the up...

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Problems solved by technology

[0003] 1. Because the ion implantation process has high requirements on vacuum and cleanliness, the mechanical group structure at the bottom of the slide table is usually equipped with seals, consumables, and other auxiliary components to maintain vacuum, etc. to connect the mechanical components inside and outside the reaction chamber. , such as bellows, bearings, sealing rings, sealing rings are used to maintain the vacuum in the reaction chamber, and also need auxiliary parts to avoid vacuum leakage when the slide table moves up and down; in ion implantation, due to the slide table Frequently moving up and down, these mechanical parts are easily damaged, which requires frequent maintenance and updating of the mechanical group structure, and ion implantation equipment is a high-precision instrument, these mechanical parts are high-precision mechanical parts, and the production of high-precision mechanical parts The cost is high, and the cost of its maintenance is relatively large; moreover, due to the large number of mechanical parts, the structure of the mechanical group occupies a large area;

[0004] 2. Due to the frequent mechanical movement of the loading table, the mechanical group structure at the bottom of the loading table moves frequently, which is prone to mechanical failure;

[0005] 3. The up and down movement of the loading table affects the high vacuum degree in the process chamber, and the vacuum leakage phenomenon in the process chamber often occurs, thereby reducing the quality and output of the ion implantation process;

[0006] Fourth, the scanning speed is slow, and it is difficult to achieve high uniformity;

[0007] 5. After ions are implanted into the wafer, it is easy to produce particles on the wafer

[0008] In addition, due to the limitation of ion implantation technology, the beam current of the ion beam will be unstable, discharge, and uneven. In the existing ion implantation equipment, the ion beam emitted by the ion generation chamber is aimed at the wafer. During the ion implantation process, it is necessary to move the slide table downwards away from the ion beam, adjust the ion beam and then move the slide table upwards for scanning. The lowering of the slide table depends on the movement of the mechanical structure, which consumes a certain During this period, part of the unqualified ion beam will be implanted on the wafer, which will cause damage to the wafer and affect the quality of ion implantation

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