Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing silicon carbide semiconductor device

A semiconductor and silicon carbide technology, applied in the field of manufacturing silicon carbide semiconductor devices, can solve problems such as reducing the performance of silicon carbide semiconductor devices

Inactive Publication Date: 2014-08-13
SUMITOMO ELECTRIC IND LTD +1
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Carbon vacancies as a type of crystal defect degrade the performance of silicon carbide semiconductor devices employing silicon carbide layers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0052] Such as figure 1 As shown in , the silicon carbide semiconductor device of this embodiment is a trench gate type IGBT 90 (Insulated Gate Bipolar Transistor), which is one type of bipolar semiconductor device. IGBT 90 includes: substrate 31 having p-type conductivity; and silicon carbide layer 82 epitaxially formed on the main surface (upper surface in the drawing) of substrate 31 . Substrate 31 is made of silicon carbide having a hexagonal crystal form or silicon carbide having a cubic crystal form. Accordingly, silicon carbide layer 82 epitaxially formed on substrate 31 is also made of silicon carbide having a hexagonal crystal form or silicon carbide having a cubic crystal form. Furthermore, IGBT 90 further includes gate insulating film 8 , gate electrode 9 , interlayer insulating film 10 , emitter electrode 42 , emitter wiring layer 43 , collector electrode 44 , and guard electrode 15 .

[0053] The silicon carbide layer 82 includes: a buffer layer 36 with p-type c...

no. 2 example

[0098] Such as Figure 14 As shown in , the silicon carbide semiconductor device of this embodiment is a planar IGBT 190, which is one type of bipolar semiconductor device. IGBT 190 includes: substrate 131 having p-type conductivity; and silicon carbide layer 182 epitaxially formed on the main surface (upper surface in the drawing) of substrate 131 . Substrate 131 is made of silicon carbide having a hexagonal crystal form or silicon carbide having a cubic crystal form. Accordingly, the silicon carbide layer 182 epitaxially formed on the substrate 131 is also made of silicon carbide having a hexagonal crystal shape or silicon carbide having a cubic crystal shape. Furthermore, IGBT 190 further includes gate insulating film 108 , gate electrode 109 , interlayer insulating film 110 , emitter electrode 142 , emitter wiring layer 143 , collector electrode 144 , and guard electrode 115 .

[0099] The silicon carbide layer 182 includes: a buffer layer 136 with p-type conductivity; a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In this method for manufacturing a silicon carbide semiconductor device, thermal etching is performed with respect to a silicon carbide layer by supplying a process gas to the silicon carbide layer, while heating the silicon carbide layer, said process gas being chemically reactive to silicon carbide. A carbon film (50) is formed on the silicon carbide layer by the thermal etching. The silicon carbide layer is heat treated such that carbon is diffused from the carbon film (50) into the silicon carbide layer.

Description

technical field [0001] The present invention relates to a method of manufacturing a silicon carbide semiconductor device, and more particularly, to a method of manufacturing a silicon carbide semiconductor device using heat treatment. Background technique [0002] Ideally, a silicon carbide single crystal has a crystal structure in which carbon atoms and silicon atoms are arranged in a perfectly ordered manner. In fact, carbon vacancies are inevitably formed in the epitaxial growth of silicon carbide layers. Carbon vacancies, a type of crystal defect, degrade the performance of silicon carbide semiconductor devices employing silicon carbide layers. Therefore, methods to reduce the carbon vacancy density are needed. [0003] According to Japanese Patent Publication No. 2008-53667 (Patent Document 1), in order to form an excess interstitial carbon atom source with respect to defects existing in the SiC crystal layer, by ionizing atoms such as carbon atoms, silicon atoms, hyd...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/12H01L29/739
CPCH01L29/045H01L21/3065H01L21/049H01L29/7395H01L21/0475H01L21/3247H01L29/1608H01L29/4236H01L29/66068H01L29/7397
Inventor 日吉透增田健良畑山智亮
Owner SUMITOMO ELECTRIC IND LTD