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Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus

A technology for vapor deposition and light-emitting devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., and can solve problems such as thickness deviation and increasing wavelength dispersion.

Inactive Publication Date: 2014-08-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, in the case of a semiconductor light emitting device, an active layer grown on a curved substrate may have a thickness deviation between a central portion and a peripheral portion, thereby increasing wavelength dispersion

Method used

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  • Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus
  • Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus
  • Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus

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Embodiment Construction

[0038] Embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0039] However, inventive concepts may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like parts.

[0040] figure 1 is a flowchart illustrating procedures of a method of manufacturing a semiconductor light emitting device according to an embodiment of the inventive concept.

[0041] The method of manufacturing a semiconductor light emitting device according to an embodiment of the inventive concept may include sequentially growing a first conductive type s...

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Abstract

A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0016314 filed with the Korean Intellectual Property Office on February 15, 2013, the entire contents of which are hereby incorporated by reference. technical field [0003] The concept of the present invention relates to a method of manufacturing a semiconductor light emitting device and a chemical vapor deposition apparatus used for the method. Background technique [0004] In general, semiconductor devices can be fabricated on heterogeneous substrates using vapor deposition methods (or vapor phase growth methods) such as metal organic vapor phase epitaxy (MOVPE), hydride vapor phase epitaxy (HVPE), etc. For example, it can be obtained by using materials such as sapphire (α-Al 2 o 3 ) substrates or heterogeneous substrates such as SiC substrates to grow single crystal nitrides to form nitride semiconductor devices. [0005] However, such a ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/205C23C16/34
CPCH01L21/02576H01L21/68735H01L21/0262H01L21/0254H01L21/0237H01L21/68771H01L21/0242H01L33/32H01L33/007H01L21/02107H01L21/67326H01L21/02433H01L21/68764C23C16/4583C23C16/54
Inventor 韩尚宪金南星金东俊司空坦申东益李焘英李庭旭
Owner SAMSUNG ELECTRONICS CO LTD