Measuring Structure and Method for Poisson's Ratio of Thin Film Material

Abstract

The present invention proposes a test structure and method for the Poisson's ratio of a film material. In the test structure, the first group of structures includes an electrostatically driven polysilicon cantilever beam (101), a non-conductive beam with an alignment structure made of the film material to be tested. Symmetrical cross beams (102), symmetrical cross beams (103) made by the film material to be tested; the second group of structures is the remaining structure after the first group of structures remove the symmetrical cross beams; the symmetrical cross beams are formed by the second anchorage area (103- 2), the third anchorage area (103-3), the horizontal short beam (103-4), the upper semi-vertical long beam (103-1) and the lower semi-vertical long beam (103-5). The loading driving part is separated from the Poisson's ratio test structure made of the film material to be tested. The test torsion angle of the Poisson's ratio test structure is controlled by geometric parameter design, and the Poisson's ratio is extracted by the principle that the same part of the two test structures is under the same force. The force on the test structure is calculated using the force and torsion angle to obtain the Poisson's ratio of the film material to be tested.

Description

technical field [0001] The invention provides a testing structure for the Poisson's ratio of a film material. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of MEMS is closely related to the material parameters. Due to the influence of the processing process, some material parameters will change. These uncertain factors caused by the processing technology will make device design and performance prediction uncertain and unstable. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessary means of process monitoring. The physical pa...

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Problems solved by technology

For insulating materials, such as silicon nitride, silicon dioxide, and single crystal silicon or polycrystalline silicon wrapped by silicon dioxide, it is not easy to directly load and detect test signals due to their insulating properties.

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