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Formation method of semiconductor structure

A semiconductor and conductive plug technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of poor morphology of conductive plugs, short circuit or open circuit of integrated circuits, etc., and achieve smooth surface, accurate graphics, Flat and smooth surface effect

Active Publication Date: 2016-12-28
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, with the improvement of the integration level of integrated circuits, the conductive plugs formed by the prior art have poor morphology, which easily causes problems such as short circuit or open circuit of the integrated circuit.

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Embodiment Construction

[0030] As mentioned in the background art, with the improvement of the integration level of integrated circuits, the conductive plugs formed in the prior art have poor morphology, which may easily cause problems such as short circuit or open circuit of the integrated circuit.

[0031] The inventors of the present invention found that with the integration of integrated circuits increasing and the size of semiconductor devices shrinking, the required conductive plugs 105 (such as Figure 4 shown) also continues to decrease in size; in the prior art, it is necessary to firstly image 3 As shown) a photoresist layer 104 is formed on the surface (such as image 3 shown), and use the photoresist layer 104 as a mask to etch to form an opening, and form a conductive plug 105 in the opening; however, as the size of the conductive plug 105 continues to decrease, the dielectric layer The roughness of the surface of 103 has a more serious impact on the exposure process for forming the ph...

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Abstract

A method for forming a semiconductor structure comprises the following steps: S101, providing a semiconductor substrate; S102, forming a first dielectric layer on the surface of the semiconductor substrate by use of a first deposition process; S103, performing surface treatment on the surface of the first dielectric layer to remove a convex part on the surface of the first dielectric layer after the first deposition process; and S104, forming a second dielectric layer on the surface of the semiconductor substrate by use of a second deposition process after the surface treatment process, wherein the rate of the second deposition process is lower than that of the first deposition process. A semiconductor structure formed by the method has good quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in integrated circuits is continuously reduced, so as to meet the requirements of miniaturization and integration in the development of integrated circuits. As the size of semiconductor devices continues to shrink, the process of forming conductive plugs for electrical interconnection between semiconductor devices is also challenged, thereby affecting the performance of semiconductor devices. [0003] Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of the formation process of a conductive plug electrically connected to a source region or a drain region of a transistor in the prior art, including: [0004] Please refer to figure 1 , provide a semico...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/31H01L21/316
CPCH01L21/76802H01L21/76819
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP