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Adhensive sheet

An adhesive sheet and adhesive layer technology, applied in the direction of adhesives, film/sheet adhesives, etc., can solve the problems of easy intrusion into adhesive sheets and semiconductor wafers, contamination of semiconductor wafers, etc.

Inactive Publication Date: 2014-09-17
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when attaching an adhesive sheet having an adhesive layer formed of two or more resins to a semiconductor wafer and subjecting the semiconductor wafer to a backside grinding process, there is a problem that grinding water and / or Or grinding dust is easy to intrude between the adhesive sheet and the semiconductor wafer, and there is a possibility of contaminating the semiconductor wafer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] As a material for forming the adhesive layer, an amorphous propylene-(1-butene) copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name "TAFTHREN H5002", propylene-derived structural unit 90) polymerized with a metallocene catalyst was used. mol% / constituent unit derived from 1-butene 10 mol%, Mw=230000, Mw / Mn=1.8) 80 parts and a propylene-ethylene copolymer polymerized using a metallocene catalyst (manufactured by Nippon Polypropylene Co., Ltd., commercial product Name "WINTEC WFX4", 96 mol% of structural units derived from propylene / 4 mol% of structural units derived from ethylene, melting point: 125°C, softening point: 115°C) 20 parts of mixture. The mixture of amorphous propylene-(1-butene) copolymer and polypropylene-ethylene copolymer is supplied from a single hopper to the extruder by feeding the mixture of resin pellets blended in a pellet state, and is molded by melt extrusion When making it mixed method to carry out.

[0073] As the intermediate la...

Embodiment 2～12

[0076] [Examples 2-12, Comparative Examples 1-7, Reference Example 1]

[0077] The resin constituting the resin layer, the resin constituting the intermediate layer, the film forming speed in co-extrusion molding, and the temperature of the touch roll in co-extrusion molding were set as shown in Table 1. In addition, the same as in Examples 1 in the same manner to obtain an adhesive sheet.

[0078] In addition, the details of the resin described in Table 1 are as follows.

[0079] "WK307": Ethylene-methyl methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name "WK307")

[0080] "H6822S": Resin mixture containing propylene-(1-butene) copolymer, styrene-based polymer, ethylene-based polymer, and butadiene-based polymer (manufactured by Sumitomo Chemical Co., Ltd., trade name "TAFTHREN H6822S")

[0081] "Vistamaxx6202": Amorphous propylene-ethylene copolymer (manufactured by ExxonMobil Chemical, trade name "Vistamaxx6202", 78 mol% of structural units der...

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Abstract

The invention provides an adhensive sheet capable of preventing grinding water and / or griding chips from intruding between the adhesive sheet and a semiconductor wafer when being attached to the semiconductor wafer and provided for griding operation carried out to the back side of the semiconductor wafer. The adhensive sheet is provided with more than two adhesive layers made by resin. The adhesive layers are characterized in that the ratio (P1-avg / P2-avg) between the phase difference in a first direction (P1-avg) and the phase difference in a second direction (P2-avg) is 0.94 to 1.06 in a line profile with the phase difference as a longitudinal axis (y axis), a measuring distance as a first direction of a transverse axis (x axis) and a second direction perpendicular to the first direction; and the line profile is obtained by an phase image of a surface at a side in contact with an object to be adhered and measured by an atomic force microscope.

Description

technical field [0001] The present invention relates to an adhesive sheet. Background technique [0002] Semiconductor wafers made of silicon, gallium, arsenic, etc. are manufactured in a large-diameter state. After the surface is patterned, the back surface is ground, and the thickness of the wafer is usually reduced to about 100-600 μm, and then dicing is separated into component pieces , and move further to the installation process. [0003] In the process of grinding the back surface of the semiconductor wafer (back grinding process), an adhesive sheet is used to protect the pattern surface of the semiconductor wafer. The adhesive sheet is usually peeled off after the back grinding process. The adhesive sheet used for this purpose requires an adhesive force that does not peel off in the back grinding process. On the other hand, it is required to be easily peeled off after the back grinding process and not to damage the semiconductor crystal. Low adhesive force of roun...

Claims

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Application Information

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IPC IPC(8): C09J7/02
Inventor 本田哲士龟井胜利盛田美希高桥智一
Owner NITTO DENKO CORP