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Gate insulating film, radiation-sensitive composition, cured film, semiconductor element, manufacturing method of semiconductor element, and display device

A gate insulating film and semiconductor technology, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced productivity of semiconductor element production display devices and increased number of gate insulating film manufacturing processes, etc.

Active Publication Date: 2020-10-30
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] However, setting the gate insulating film to a two-layer structure using two different materials leads to an increase in the number of manufacturing steps of the gate insulating film
As a result, the productivity of the semiconductor element, and even the productivity of the display device using the semiconductor element is lowered.

Method used

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  • Gate insulating film, radiation-sensitive composition, cured film, semiconductor element, manufacturing method of semiconductor element, and display device
  • Gate insulating film, radiation-sensitive composition, cured film, semiconductor element, manufacturing method of semiconductor element, and display device
  • Gate insulating film, radiation-sensitive composition, cured film, semiconductor element, manufacturing method of semiconductor element, and display device

Examples

Experimental program
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Effect test

preparation example Construction

[0225]

[0226] The composition according to the embodiment of the present invention is prepared by mixing the [A] hydrolysis condensate and [B] metal oxide particles, and optionally [C] a radiation-sensitive acid generator or a radiation-sensitive base. The generator, [D] dispersant, and other optional components are mixed in a predetermined ratio. Usually, with regard to the composition of the present embodiment, after mixing [B] metal oxide particles, [D] dispersant, and [E] dispersion medium in a predetermined ratio to prepare a dispersion liquid, the dispersion liquid can be mixed with [A] ] the hydrolysis condensate, and if necessary, [C] a radiation-sensitive acid generator or a radiation-sensitive base generator or optional components are mixed to prepare the composition of this embodiment in a dispersion state.

[0227] In addition, the dispersion at the time of preparing the dispersion liquid may be carried out by using a paint shaker (paint shaker), SC mill (SC mi...

Embodiment

[0280] Hereinafter, embodiments of the present invention will be described in detail based on examples, but the present invention should not be interpreted limitedly by these examples.

[0281] The number average molecular weight (Mn) and weight average molecular weight (Mw) of the hydrolysis-condensation product obtained by the following synthesis example were measured with the gel permeation chromatography (GPC) of the following specification.

[0282] Device: GPC-101 (manufactured by Showa Denko Co., Ltd.)

[0283] Column: Combining GPC-KF-801, GPC-KF-802, GPC-KF-803 and GPC-KF-804 (manufactured by Showa Denko Co., Ltd.)

[0284] Mobile phase: tetrahydrofuran

[0285] [A] Synthesis of hydrolysis condensate

Synthetic example 1

[0287] In a container with a stirrer, add 144 parts by mass of propylene glycol monomethyl ether, then add 21 parts by mass of tetrabutoxytitanium (TBT), 19 parts by mass of methyltrimethoxysilane (MTMS), and heat until the solution temperature reaches 60 until ℃. After the solution temperature reached 60° C., 7 parts by mass of ion-exchanged water was added, heated to 75° C., and maintained for 3 hours. Then, 25 parts by mass of methyl orthoformate was added as a dehydrating agent, and stirred for 1 hour. Furthermore, the temperature of the solution was set at 40° C., and the solution was evaporated while maintaining the temperature, whereby water and alcohol generated by hydrolytic condensation were removed. The hydrolysis-condensation product (A-1) was obtained by the above operation. The number average molecular weight (Mn) of the obtained hydrolysis-condensation product was 2500, and the molecular weight distribution (Mw / Mn) was 2.

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Abstract

The invention provides a grid insulation membrane with a controllable dielectric characteristic, a radiation sensitivity composition for forming the grid insulation membrane, a hardened membrane, a semiconductor element, a manufacturing method of the semiconductor element, and a display device comprising the semiconductor element. The semiconductor element TFT3 comprises a semiconductor layer (6), a grid electrode (4), and a grid insulation membrane (5); wherein the grid insulation membrane (5) comprises a hardened membrane, which is composed of the following components: (A) a hydrolysis condensate; (B) metal oxide particles, wherein the metal is at least one component of Al, Zr with radiation sensitivity, Zn, In, Sn, Te, Sb, Ba, and Ce; and (C) a radiation sensitivity acid generator or a radiation sensitivity alkali generator. The TFT3 can be used as a switch element in a display device.

Description

technical field [0001] The present invention relates to a gate insulating film, a composition, a cured film, a semiconductor element, a method for manufacturing the semiconductor element, and a display device. Background technique [0002] A display device using a liquid crystal or an organic electroluminescence (EL) element is thin and has low power consumption, and is used in various fields. In particular, it is an active matrix (active matrix) display device in which thin film transistors (Thin Film Transister, TFT) as semiconductor elements are respectively provided as switching elements for each pixel, which can perform high-definition image display and has high contrast. etc., displaying excellent quality. Therefore, active matrix display devices are used in televisions (television), monitors (monitors), notebook personal computers (notepersonal computers), etc., and are used in display devices of portable information devices such as smart phones (smartphone). In par...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075H01L21/312H01L51/50
CPCG02F1/1368H01L21/28158H01L29/4908H01L29/786
Inventor 一戸大吾滨田谦一
Owner JSR CORPORATIOON