A Plasma Processing Device with Reduced Gate Effect

Abstract

The invention discloses a plasma processing apparatus capable of reducing a gate effect. A lifting ring that can move up and down and encircles gas spraying head is arranged in a plasma processing cavity. A metal baffle plate is fixedly arranged at one side, approaching the side wall of the processing cavity, of the lifting ring and preferably, an aluminum metal baffle plate made of the same material as that of the side wall of the processing cavity is used, so that the metal baffle plate can shield a gate opening of the side wall of the processing cavity when the lifting ring descends. Therefore, a technical problem that electrical field distribution in the processing cavity is not uniform due to the gate opening of the side wall of the processing cavity can be solved. According to the technical scheme, the structure of the apparatus is simple. On the basis of the existing lifting ring, the lifting ring and the metal baffle plate are fixedly connected by a bolt or by cutting a groove for embedding the metal baffle plate in one side, approaching the side wall of the processing cavity, of the lifting ring. On the basis of the simple structure, the electric field distribution at the gate opening can be effectively adjusted, thereby effectively adjusting the electric field distribution uniformity in the processing cavity.

Description

technical field [0001] The invention relates to the technical field of semiconductor substrate processing, in particular to a plasma processing device for uniformly processing substrates. Background technique [0002] In the field of semiconductor manufacturing technology, it is often necessary to pattern and etch a substrate to form holes or trenches. In the prior art, dry RIE etching technology is usually used. Dry etching is usually carried out in a plasma etching device, which at least includes a processing chamber. Before the etching starts, the substrate to be processed is first passed through a door opening on the side wall of the processing chamber. Placed on the substrate support frame inside the processing chamber, the reaction gas is introduced into the processing chamber, and the reaction gas is dissociated into plasma, free radicals, etc. under the action of the electromagnetic field inside the processing chamber, which can physically affect the substrate. Part...

AI Technical Summary

Problems solved by technology

Ideally, the side wall of the processing chamber is cylindrical, and the electromagnetic field in the processing chamber is uniformly distributed. However, since a door opening is arranged on the side wall of the processing chamber, the electric field distribution here in the processing chamber is uneven, thereby affecting Process uniformity of the substrate

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