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A Plasma Processing Device with Reduced Gate Effect

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of uneven electric field distribution, affecting the uniformity of substrate processing, etc., and achieve the effect of simple structure

Active Publication Date: 2016-05-11
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ideally, the side wall of the processing chamber is cylindrical, and the electromagnetic field in the processing chamber is uniformly distributed. However, since a door opening is arranged on the side wall of the processing chamber, the electric field distribution here in the processing chamber is uneven, thereby affecting Process uniformity of the substrate

Method used

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  • A Plasma Processing Device with Reduced Gate Effect
  • A Plasma Processing Device with Reduced Gate Effect
  • A Plasma Processing Device with Reduced Gate Effect

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Embodiment Construction

[0020] figure 1 A schematic structural view showing that the lifting ring of the plasma processing chamber of the present invention is in a raised state; figure 1 The shown plasma processing apparatus includes a vacuum processing chamber 100; the vacuum processing chamber 100 includes a cylindrical processing chamber side wall 110, and one side of the processing chamber side wall 110 is provided with a door that allows substrates to enter and exit Opening 112 . The upper electrode 140 and the lower electrode 130 opposite up and down are arranged in the vacuum processing chamber 100, and the lower electrode 130 is connected to the radio frequency power source 150, and simultaneously serves as a supporting device for the substrate 120; the upper electrode 140 is grounded, and is connected to the reaction gas source 160 simultaneously, as A gas shower head for supplying reactive gases into the processing chamber. A grounding ring 142 is arranged around the gas shower head 140 , ...

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Abstract

The invention discloses a plasma processing apparatus capable of reducing a gate effect. A lifting ring that can move up and down and encircles gas spraying head is arranged in a plasma processing cavity. A metal baffle plate is fixedly arranged at one side, approaching the side wall of the processing cavity, of the lifting ring and preferably, an aluminum metal baffle plate made of the same material as that of the side wall of the processing cavity is used, so that the metal baffle plate can shield a gate opening of the side wall of the processing cavity when the lifting ring descends. Therefore, a technical problem that electrical field distribution in the processing cavity is not uniform due to the gate opening of the side wall of the processing cavity can be solved. According to the technical scheme, the structure of the apparatus is simple. On the basis of the existing lifting ring, the lifting ring and the metal baffle plate are fixedly connected by a bolt or by cutting a groove for embedding the metal baffle plate in one side, approaching the side wall of the processing cavity, of the lifting ring. On the basis of the simple structure, the electric field distribution at the gate opening can be effectively adjusted, thereby effectively adjusting the electric field distribution uniformity in the processing cavity.

Description

technical field [0001] The invention relates to the technical field of semiconductor substrate processing, in particular to a plasma processing device for uniformly processing substrates. Background technique [0002] In the field of semiconductor manufacturing technology, it is often necessary to pattern and etch a substrate to form holes or trenches. In the prior art, dry RIE etching technology is usually used. Dry etching is usually carried out in a plasma etching device, which at least includes a processing chamber. Before the etching starts, the substrate to be processed is first passed through a door opening on the side wall of the processing chamber. Placed on the substrate support frame inside the processing chamber, the reaction gas is introduced into the processing chamber, and the reaction gas is dissociated into plasma, free radicals, etc. under the action of the electromagnetic field inside the processing chamber, which can physically affect the substrate. Part...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/30
Inventor 徐骅徐朝阳
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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