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Light-emitting diode electrode structure and manufacturing process thereof

A technology of light-emitting diode and electrode structure, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of increasing product defect rate and alignment error, and achieve the effect of reducing defect rate, reducing error and improving production efficiency

Inactive Publication Date: 2014-09-24
JIANGSU YANGJING OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Light-emitting diode structures in the prior art such as figure 2 As shown, it is mainly composed of n-electrode layer, light-emitting component, p-electrode layer and p-pad layer, wherein the p-electrode structure only includes p-electrode layer and p-pad, since the p-electrode layer and p-pad are separated during production Manufacturing, which will cause alignment errors and increase the defective rate of products

Method used

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  • Light-emitting diode electrode structure and manufacturing process thereof
  • Light-emitting diode electrode structure and manufacturing process thereof

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Embodiment Construction

[0021] Such as figure 1 The electrode structure of a light-emitting diode shown includes a light-emitting component 2, an n-electrode layer 1 is provided below the light-emitting component 2, a p-electrode layer 3 is provided above the light-emitting component 2, and a p-pad 5 is provided above the p-electrode layer 3. A barrier layer 4 is provided between the electrode layer 3 and the p pad 5, the thickness of the barrier layer 4 is 0.1-1 μm, and the material of the barrier layer 4 is an alloy of titanium, tungsten, tantalum, and molybdenum, such as TiW, TaW, or silicon compound, nitrogen compound or silicon nitride compound of the above materials, such as TiN, WN, TaN, TaSiN, WSiN, TWN, p-electrode layer 3 is gold-zinc alloy, gold-beryllium alloy or titanium-platinum alloy, p pad 5 It is an alloy of titanium and aluminum, an alloy of titanium and gold, or an alloy of titanium, aluminum and gold, and the total thickness of the p-pad 5 is 0.5-3.0 μm. The process for producin...

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Abstract

The invention discloses a light-emitting diode electrode structure and a manufacturing process thereof. The light-emitting diode electrode structure comprises a light-emitting assembly. An n-electrode layer is arranged below the light-emitting assembly, and a p-electrode layer is arranged above the light-emitting assembly. A p-welding-disc is arranged above the p-electrode layer. A barrier layer is arranged between the p-electrode layer and the p-welding-disc. The barrier layer is additionally arranged between the p-electrode layer and the welding disc in an existing light-emitting P-electrode structure so that alignment error is reduced, the p-electrode layer, the barrier layer and the p-welding-disc are enabled to be completely aligned, and thus production efficiency is enhanced and product fraction defective is reduced.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diode manufacturing, and in particular relates to a light-emitting diode electrode structure and a manufacturing process thereof. Background technique [0002] Due to the characteristics and advantages of long life, small size, low heat generation, low power consumption, fast response, no radiation and monochromatic light emission, light emitting diodes are widely used in indicator lights, advertising billboards, Signal lights, car lights, display panels, communication appliances, consumer electronics and other products. [0003] Light-emitting diode structures in the prior art such as figure 2 As shown, it is mainly composed of n-electrode layer, light-emitting component, p-electrode layer and p-pad layer, wherein the p-electrode structure only includes p-electrode layer and p-pad, since the p-electrode layer and p-pad are separated during production Manufacturing, this will cause alignm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/00
CPCH01L33/38H01L33/62H01L2933/0016H01L2933/0066
Inventor 廖丰标
Owner JIANGSU YANGJING OPTOELECTRONICS