Unlock instant, AI-driven research and patent intelligence for your innovation.

Trench electrode arrangement

A trench and electrode technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as short circuit between gate electrodes and source electrodes

Active Publication Date: 2014-10-01
INFINEON TECH AG
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such a cooling element may short-circuit the gate and source electrodes arranged at the first surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench electrode arrangement
  • Trench electrode arrangement
  • Trench electrode arrangement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Figure 1A and 1B A first embodiment of a vertical transistor device, in particular a trench transistor device, is schematically illustrated. The transistor device comprises a semiconductor body 100 having a first surface 101 and a second surface 102 . Figure 1A and 1B Each of shows a vertical cross-sectional view of the semiconductor body 100, wherein Figure 1A shows the semiconductor body 100 in a first vertical sectional plane A-A, and Figure 1B A vertical cross-sectional view in a second vertical section plane B-B is shown. These vertical section planes A-A, B-B extend perpendicular to the first and second surfaces 101 , 102 of the semiconductor body 100 . Figure 1A and 1B Each only shows a cross-section of the semiconductor body 100 .

[0033] refer to Figure 1A , the transistor device comprises a semiconductor via 4 extending in the vertical direction of the semiconductor body 100 to the second surface 102 in the semiconductor body 100 . A “vertical direc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A trench electrode arrangement is provided. A method includes forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that a first trench section and at least one second trench section adjoin the first trench section, wherein the first trench section is wider than the second trench section. A first electrode is formed, in the at least one second trench section, and dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer. An inter-electrode dielectric layer is formed, in the at least one second trench section, on the first electrode. A second electrode is formed, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, such that the second electrode at least in the first trench section is dielectrically insulated from the semiconductor body by a second dielectric layer.

Description

[0001] priority claim [0002] This application is a continuation-in-part (CIP) of US Patent Application No. 13 / 241,771 filed September 23, 2011, the contents of which are hereby incorporated by reference in their entirety. technical field [0003] Embodiments of the invention relate to methods for producing semiconductor devices, in particular, methods for producing semiconductor devices comprising trench electrode arrangements, such as trench transistor devices. Background technique [0004] A trench transistor device such as a trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or a trench IGBT (Insulated Gate Bipolar Transistor) is a vertical transistor device comprising a A semiconductor body integrating at least one source region, at least one body region, a drift region, and a drain region in the first surface and the second surface. In an IGBT, the source and drain regions are also called emitter regions, and the body and drift regions are also called ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L29/40H01L29/417H01L29/423H01L23/367
CPCH01L29/78H01L21/283H01L23/481H01L21/743H01L29/0653H01L29/407H01L29/41775H01L29/4236H01L29/4238H01L29/66734H01L29/7813H01L2924/0002H01L21/76898H01L29/42368H01L29/7397H01L29/7811
Inventor A.迈泽T.施勒泽M.聪德尔
Owner INFINEON TECH AG