Plasma processing apparatus and clamping removal device and method thereof
A processing device and plasma technology, applied in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve problems such as damage to the back of the substrate, and achieve the effect of avoiding damage
Active Publication Date: 2014-10-29
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology
The dechucking process adopted by the prior art includes firstly stopping the process in the plasma processing chamber, then connecting the lifting pin to the discharge circuit, and finally connecting the lifting pin to the back of the substrate, however, after the lifting pin is connected to the substrate Before the back of the chip, there is a certain amount of residual charge on the back of the substrate. The potential of the lifting thimble is 0 because it has been grounded. At the moment of contact between the two, the potential difference will cause arcing, which will damage the substrate. great damage on the back
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[0029] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.
[0030] figure 1 A schematic structural view of a plasma processing device and a lifting device is shown. The plasma processing chamber 100 has a processing chamber (not shown), the processing chamber is substantially cylindrical, and the side walls of the processing chamber are substantially vertical, and there are upper electrodes and lower electrodes arranged parallel to each other in the processing chamber. Typically, the area between the upper and lower electrodes is the processing area P where high frequency energy will be developed to ignite and sustain the plasma. A substrate 101 to be processed is placed above the electrostatic chuck 102, and the substrate 101 may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. Wherein, the electrostatic chuck 102 is used to clamp the subst...
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The invention provides a plasma processing apparatus and a clamping removal device and method thereof. The method comprises a step a of connecting a lifting device to a discharge circuit so as to remove the residual charge on the lifting device; a step b of disconnecting the lifting device and the discharge circuit; a step c of raising the lifting device to enable the lifting device to contact the bottom surface of a substrate, so that the residual charge on the substrate can be transferred to the lifting device; and a step d of lowering the lifting device to disconnect the lifting device and the back of the substrate, and connecting the lifting device again to the discharge circuit so as to remove the residual charge on the lifting device and the substrate. The invention can prevent arc discharge between the substrate and the lifting device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma processing device and its declamping device and method. Background technique [0002] In the field of semiconductor manufacturing, semiconductor substrates need to undergo a series of processes in a semiconductor processing system to form a predetermined structure, such as a plasma etching machine or a plasma chemical vapor deposition machine. In order to meet the process requirements, it is not only necessary to strictly control the process, but also involves the loading and unclamping of the semiconductor substrate. The loading and unchucking of semiconductor substrates are critical steps in semiconductor substrate processing. [0003] There is usually still residual charge on the bottom surface of the substrate, and the residual charge causes the static electricity between the substrate and the electrostatic chuck to generate a downward suction force to att...
Claims
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IPC IPC(8): H01J37/32H01L21/683
Inventor 梁洁万磊
Owner ADVANCED MICRO FAB EQUIP INC CHINA