Etching method of composite film layer
A composite film layer and over-etching technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of many machines and low production capacity
Active Publication Date: 2017-02-01
CSMC TECH FAB2 CO LTD
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- Description
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- Application Information
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Problems solved by technology
However, this method uses a large number of machines, resulting in low productivity
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[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0027] Generally speaking, after most areas of the polysilicon layer are etched clean, monitoring equipment is often used to confirm whether the etching is clean, but in fact there will be monitoring loopholes, that is, there will be a small number of areas that have not been etched cl...
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Abstract
The invention discloses an etching method of a composite membrane, comprising the following steps: a device with a composite membrane deposited thereon is provided, wherein the composite membrane is formed by successively stacking a first polycrystalline silicon layer, a silicon dioxide layer and a second polycrystalline silicon layer and the second polycrystalline silicon layer is directly contacted with the device; surface pretreatment is carried out on the first polycrystalline silicon layer; the first polycrystalline silicon layer is coated with a photoresist, and then the first polycrystalline silicon layer undergoes main etching, and finally the polycrystalline silicon layer undergoes over etching; the silicon dioxide layer undergoes main etching, then the silicon dioxide layer undergoes over etching; and the second polycrystalline silicon layer undergoes main etching, and then the second polycrystalline silicon layer undergoes over etching. According to the etching method of the composite membrane, the first polycrystalline silicon layer, the silicon dioxide layer and the second polycrystalline silicon layer successively undergo etching. Etching is carried out for three times after photoetching is carried out for one time. Only one polycrystal etching machine is used. Productivity is high.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing and processing, in particular to an etching method for a composite film layer. Background technique [0002] At present, microelectronic technology has entered the era of VLSI and system integration, and microelectronic technology has become the symbol and foundation of the information age. [0003] In microelectronics technology, the manufacture of an integrated circuit chip needs to go through processes such as integrated circuit design, mask manufacturing, raw material manufacturing, chip processing, packaging, and testing. Among them, the technology of etching semiconductor silicon wafers to form process trenches is particularly critical. [0004] Etching (Etch) is a very important step in the semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process, and is a major process of patterning (pattern) processing associated with li...
Claims
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IPC IPC(8): H01L21/02H01L21/311H01L21/3213
CPCH01L21/02164H01L21/02595H01L21/308H01L21/31116H01L21/32137
Inventor 章安娜
Owner CSMC TECH FAB2 CO LTD