A gan hybrid integrated active quasi-circulator using feed-forward cancellation method

Abstract

The invention provides a GaN active quasi circulator based on the feedforward compensation technology. According to the quasi circulator, a GaN HEMT is adopted on an emitting branch for achieving high gain and one-direction transmission characteristic of the emitting branch, and the feedforward compensation technology is adopted in order to restrain power leakage caused by high gain of the emitting branch, between an emitting port and a receiving port. Amplitude modulation and phase shifting are carried out on the part, with input emitting signals, of a feedforward branch, so that the characteristic that signals of the feedfoward branch and the leakage signals are uniform in amplitude and inverted in phase is achieved at the receiving port, then mutual offset is achieved, and the characteristic of lower power leakage is achieved. In addition, in order to further improve the gain of the emitting branch and relieve the weakening of noise performance of the receiving branch to the greatest extent, non-equal division couplers are adopted at the emitting port and the receiving port. Finally, the GaN active quasi circulator achieves higher power capacity, higher emitting gain and lower power leakage, and has the good application prospect.

Description

technical field [0001] The invention belongs to a microwave and millimeter wave hybrid integrated circuit, and is a GaN hybrid integrated active quasi-circulator based on a novel high-power device and adopting a feed-forward cancellation method. Background technique [0002] The circulator is mainly used to isolate the transmitted signal and the received signal, so it is widely used in microwave and millimeter wave systems. Passive circulators are generally made of ferrite materials, which have the advantages of low insertion loss, small power loss, high stability, and large power capacity, but their volume is too large, their bandwidth is relatively narrow, and it is difficult to use them in a single chip. Integrated design, so it cannot adapt to the integration and miniaturization needs of today's communication systems. So active circulators designed using bipolar junction transistors (BJT) and high electron mobility transistors (HEMT) began to appear. In addition to thei...

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Problems solved by technology

For PCB technology, the frequency of its design is limited, and peripheral circuits such as matching circuits and DC bias circuits will make the overall circuit size larger

However, the size of MMIC is very small. At present, the technology that has been studied more internationally is the complementary metal-oxide-semiconductor (CMOS) process, but the problem is that the power capacity of the active circulator based on this process is generally small, and the breakdown voltage is also low. Relatively low, not suitable for high-power applications, such as high-power T / R components used in active phased arrays; and the active circulator is located after the power amplifier of the transmit branch in the transceiver component, so its 1dB output The input power corresponding to the power compression point must reach the output power level of the power amplifier, and in the current active circulator based on CMOS technology, the input power value corresponding to the 1dB output power compression point is relatively low, which cannot withstand the transmission support at all. The output power of the power amplifier in the road, so the current active circulator based on CMOS technology cannot meet the actual application requirements

However, there is no report on the design of active circulators using gallium nitride (GaN) devices in the prior art

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