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Preparation technology for obtaining SiC@SiO2 nanometer cables with controllable cladding-layer thicknesses and cladding-free SiC nano wire

A nano-cable and cladding technology, which is applied in nanotechnology, cable/conductor manufacturing, circuits, etc., can solve the problems of ecological environmental pollution, difficulty in controlling the thickness of SiO cladding, etc., and achieve low cost, low cost, and easy operation. simple effect

Inactive Publication Date: 2014-11-26
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

HF pickling treatment is a method to remove SiO 2 Effective method of cladding layer, but during the process, the product SiF 4 It is a toxic gas, which inevitably causes serious pollution to the ecological environment; at the same time, it is difficult to control SiO 2 Thickness of cladding

Method used

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  • Preparation technology for obtaining SiC@SiO2 nanometer cables with controllable cladding-layer thicknesses and cladding-free SiC nano wire
  • Preparation technology for obtaining SiC@SiO2 nanometer cables with controllable cladding-layer thicknesses and cladding-free SiC nano wire
  • Preparation technology for obtaining SiC@SiO2 nanometer cables with controllable cladding-layer thicknesses and cladding-free SiC nano wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1. First, weigh 0.8g NaOH solid in a clean and dry plastic beaker, then measure 20ml of distilled water and pour it into the beaker, stir with a glass rod to dissolve NaOH rapidly, and prepare 1mol.L -1 NaOH solution; secondly, put 0.1gSiCSiO 2 Nanocables are poured into 1mol.L -1 NaOH solution in a plastic beaker, and place the plastic beaker in a constant temperature water bath with magnetic stirring; then, adjust the rotation speed of the magnet to 900r / min, and the reaction temperature is 70°C, and react under these conditions for 10min; finally, put The reaction solution was centrifuged for 3 times, and the resulting precipitate was put into a blast drying oven, and dried at 80° C. for 12 hours to obtain the desired product (the TEM photo of which is shown in figure 1 b; XRD pattern see figure 2 b).

Embodiment 2

[0035] Example 2. First, put 0.1g SiCSiO 2 Nanocables are poured into 1mol.L -1 NaOH solution in a plastic beaker, and place the plastic beaker in a constant temperature water bath with magnetic stirring; then, adjust the rotation speed of the magnet to 900r / min, and the reaction temperature to 70°C, and react for 20min under these conditions; finally, place the The reaction solution was centrifuged for 3 times, and the resulting precipitate was put into a blast drying oven, and dried at 80° C. for 12 hours to obtain the desired product (the TEM photo of which is shown in figure 1 c; XRD pattern see figure 2 c).

Embodiment 3

[0036] Example 3. First, put 0.1g SiCSiO 2 Nanocables are poured into 1mol.L -1 NaOH solution in a plastic beaker, and the plastic beaker is placed in a constant temperature water bath with magnetic stirring; then, adjust the rotation speed of the magnet to 900r / min, the reaction temperature is 70°C, and react for 30min under these conditions; finally, the The reaction solution was centrifuged for 3 times, and the resulting precipitate was put into a blast drying oven, and dried at 80° C. for 12 hours to obtain the desired product (the TEM photo of which is shown in figure 1 d; XRD pattern see figure 2 d).

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Abstract

The invention relates to a preparation technology for obtaining SiC@SiO2 nanometer cables with controllable cladding-layer thicknesses and a cladding-free SiC nano wire. An alkali wash method which is simple and highly efficient, low in cost and environment friendly is adopted to process a SiC@SiO2 nanometer cable and through control of a reaction time, the SiC@SiO2 nanometer cables with different cladding-layer thicknesses are obtained and under a condition of a reaction temperature of 70 DEG C, a NaOH solution concentration of 1mol.L-1 and a reaction time of 40min, the cladding-free SIC nano wire is obtained. Based on experiment results, a theoretical equation used for instructing preparation of the SiC@SiO2 nanometer cables with controllable SiO2 cladding-layer thicknesses and the cladding-free SiC nano wire and a preparation technology for controllable thickness of a SiO2 cladding layer is obtained so that a feasible clue is provided to controllable processing of thicknesses of cladding layers of other nanometer cables.

Description

technical field [0001] The invention relates to a controllable removal technology of the thickness of the coating layer of the nano-cable, specifically, the alkali washing method is used to treat SiCSiO 2 Nanocables were processed to obtain SiO by controlling the reaction time 2 SiCSiO with controllable cladding thickness 2 Nano cables and uncoated SiC nanowires. technical background [0002] Many nanocables, such as SiSiO x -C, Cu / C, MnO 2 / ZTO / CF, AlN / GaN and Ag / C have excellent physical and chemical properties, which make them widely used in some industrial fields. However, in a large number of one-dimensional or quasi-one-dimensional nanomaterials with coatings, SiC nanowires are also coated with different nanomaterials, such as SiC / SiO 2 / BN, SiC / Al 2 o 3 , SiC / BN and SiC / C, have attracted extensive attention of researchers due to their outstanding photoluminescence properties, field emission properties, and remarkable electrical properties. [0003] As we all k...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00B82Y40/00
Inventor 李镇江赵健孟阿兰张猛宫璐
Owner QINGDAO UNIV OF SCI & TECH
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