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Nitride semiconductor device

一种氮化物半导体、器件的技术，应用在半导体器件、半导体/固态器件制造、电固体器件等方向，能够解决低接触电阻、欧姆电极接触电阻高等问题，达到接触电阻降低的效果

Active Publication Date: 2014-12-03
ROHM CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the above-mentioned nitride semiconductor device, the present inventors actually conducted experiments, and in the case where an ohmic electrode was formed after the oxygen plasma treatment was performed on the GaN layer, the contact resistance of the ohmic electrode was high, and a sufficiently low contact resistance could not be obtained by any means. Contact resistance

Method used

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no. 1 approach

[0071] figure 1 A cross-sectional view showing a nitride semiconductor device according to a first embodiment of the present invention, which is a GaN-based HFET (Hetero-junction Field Effect Transistor: heterojunction field effect transistor).

[0072] The semiconductor device, such as figure 1 As shown, an undoped AlGaN buffer layer 15 and a nitride semiconductor stacked body 20 including undoped AlGaN as an example of a first nitride semiconductor layer are formed on a Si substrate 10. GaN layer 1 and undoped AlGaN layer 2 as an example of the second nitride semiconductor layer. The interface between the undoped GaN layer 1 and the undoped AlGaN layer 2 is a heterointerface. A 2DEG layer (two-dimensional electron gas layer) 3 is generated near the interface between the undoped GaN layer 1 and the undoped AlGaN layer 2 .

[0073] In addition, instead of the GaN layer 1 described above, an AlGaN layer having a composition having a band gap smaller than that of the AlGaN la...

no. 2 approach

[0120] Figure 11 A cross-sectional view showing a nitride semiconductor device according to a second embodiment of the present invention, which is a GaN-based HFET (Hetero-junction Field Effect Transistor: heterojunction field effect transistor).

[0121] In addition, in the description of the nitride semiconductor device of the second embodiment, the same reference numerals as those of the constituent elements of the first embodiment are assigned to the same constituent elements as those of the nitride semiconductor device of the first embodiment. Numbers are used for brief explanations, and detailed descriptions are omitted.

[0122] The semiconductor device, such as Figure 11 As shown, an undoped AlGaN buffer layer 15 and a nitride semiconductor stacked body 220 including undoped AlGaN as an example of a first nitride semiconductor layer are formed on a Si substrate 10. GaN layer 201 and undoped AlGaN layer 202 as an example of the second nitride semiconductor layer. T...

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Abstract

Provided is a nitride semiconductor device that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In this GaN HFET, concavities (106, 109) are formed at a nitride semiconductor laminate (20) comprising an undoped GaN layer (1) and an undoped AlGaN layer (2) formed on an Si substrate (10), and a source electrode (11) and a drain electrode (12) are formed in the concavities (106, 109). In a region deeper than the interface (S1, S2) between the GaN layer (1) and the source electrode (11) and drain electrode (12), which comprise a TiAl material, there is a first chlorine concentration peak (P11) proximal to the interface, and at a position deeper than the first chlorine concentration peak (P11), there is a second chlorine concentration peak (P22) of a chlorine concentration of no greater than 1.3×1017 cm-3.

Description

technical field [0001] The present invention relates to nitride semiconductor devices. Background technique [0002] Conventionally, as a nitride semiconductor device, the surface of the n-type GaN contact layer was subjected to oxygen plasma treatment to form an oxygen-doped layer, and then an ohmic electrode was formed on the n-type GaN contact layer, thereby making the n-type GaN contact layer A nitride semiconductor device having reduced contact resistance with an ohmic electrode (see Japanese Patent No. 2967743 (Patent Document 1)). [0003] However, in the above-mentioned nitride semiconductor device, the present inventors actually conducted experiments, and in the case where an ohmic electrode was formed after the oxygen plasma treatment was performed on the GaN layer, the contact resistance of the ohmic electrode was high, and a sufficiently low contact resistance could not be obtained by any means. Contact resistance. [0004] prior art literature [0005] patent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/338H01L21/28H01L29/417H01L29/778H01L29/812
CPCH01L29/7787H01L29/41766H01L29/66462H01L29/402H01L29/42316H01L29/2003H01L29/7786H01L29/207H01L2924/01017H01L29/205H01L29/452
Inventor 安井忠森下敏藤田耕一郎栗田大佑
Owner ROHM CO LTD
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