A device for adjusting the uniformity of a wide-beam ion implanter

Abstract

The invention discloses a broad beam ion implantation machine uniformity regulating device and aims to solve the problem that the broadband beam uniformity is difficult to control. The regulating device comprises an analyzing diaphragm, a broad parallel lens, a multi-pole regulating mechanism and a vertical scanning substrate. The broad parallel lens is arranged at the outlet of broadband ion flows of the analyzing diaphragm, and the broadband ion flows enter the broad parallel lens at the certain flare angle; the outlet of the broad parallel lens is provided with the multi-pole regulating mechanism regulating the beam flow deflection angle, so that beam flow horizontal density distribution is changed when the ion beams arrive in the vertical scanning substrate, and the uniformity of the horizontal beam flow distribution of ion beams is adjusted; the vertical scanning substrate is arranged at the outlet of the multi-pole regulating mechanism to scan the ion flows vertically and uniformly, and the vertical uniformity of the ion flows is guaranteed. The device is simple to control, has fine adjusting effect and is capable of meeting the beam uniformity adjustment of a broadband ion implantation machine.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, in particular to a uniformity adjusting device for a wide-beam ion implanter, which is one of the key devices in low-energy and large-beam ion implantation equipment. Background technique [0002] With the development of semiconductor technology, and with the reduction of characteristic line width and the increase of process complexity, the uniformity and stability of beam current are becoming more and more important for ion implantation systems, and have become an important key to the success or failure of devices. When the energy of the low-energy broadband ion implanter is very low and the beam current is very large, the ion beam diverges seriously due to the space charge effect, making it more difficult to adjust the uniformity of the beam level. Therefore, how to design an appropriate ion optical system and broadband Beam uniformity adjustment device; to ensure the unifo...

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Problems solved by technology

[0005] In order to solve the problem that the uniformity of the wide-band beam is difficult to control, the present invention aims to provide a device for adjusting the uniformity of the wide-beam ion implanter, which integrates the successful experience and technical advantages of developing semiconductor ion implanters on the basis of the ion optical system. The control of the device is simple, the adjustment effect is good, and it can well meet the beam uniformity adjustment requirements of broadband ion implanters

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