Reference memory cell bias voltage generator and bias voltage supply method

Abstract

The invention discloses a bias generator of reference storage cell and a bias supply method. The bias generator of the reference storage cell comprises a data reading detector, a cut-off signal generator and an output stage controller. The data reading detector receives a sense amplifier enable signal and a sense amplifier latch-up signal. The data reading detector generates a detection signal according to the turning point of the sense amplifier enable signal and the sense amplifier latch-up signal. The cut-off signal generator receives the detection signal and generates a cut-off signal based on the detection signal through a time delay. Starting time of the cut-off signal is determined by the time delay. The output stage controller provides a bias supply signal or interrupts generation of the bias supply signal based on the cut-off signal.

Description

technical field [0001] The present invention relates to a serial interface flash memory, and in particular to a bias voltage generator suitable for a reference memory cell of the serial interface flash memory. Background technique [0002] In the existing technical field, when the serial interface flash memory is read, the gate bias of the reference memory cell is required to cause the so-called read disturb effect. The effect of the above-mentioned read disturb depends on the magnitude of the biased voltage and the duration of the biased gate of the reference memory cell. The read disturb will reduce the read margin of the serial interface flash memory, thereby affecting the performance of the serial interface flash memory. [0003] In the existing technical field, the bias voltage applied to the reference memory cell in the serial interface flash memory is continuously applied when the serial interface flash memory performs a read operation, especially a continuous addres...

AI Technical Summary

Problems solved by technology

The read disturbance will reduce the read margin of the serial interface flash memory, thereby affecting the performance of the serial interface flash memory.

[0003] In the existing technical field, the bias voltage applied to the reference memory cell in the serial interface flash memory is continuously applied when the serial interface flash memory performs a read operation, especially a continuous address read operation. On the gate of the reference memory cell, therefore, in the case of long-term receiving bias voltage, the memory cell is usually degraded

In particular, for serial interface flash memory operating at a low operating frequency, the bias voltage applied to the reference memory cell is longer, and the damage to the reference memory cell will be more serious

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