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93results about How to "Increase the effective thickness" patented technology

Multilayer grating bearing cylinder and preparation method thereof

The invention discloses a multilayer grating bearing cylinder and a preparation method thereof. The multilayer grating bearing cylinder is formed by nesting at least two single-layer grating cylinders, and the densities of the meshes of the adjacent single-layer grating cylinders are different. The preparation method for the multilayer grating bearing cylinder made from a composite material comprises the following steps: producing a wood pattern for casting a soft mode, producing a silicon rubber soft mode, assembling a mould, winding the soft mode in an assistance manner, carrying out vacuum bag moulding, demoulding and carrying out after-treatment, and integrally moulding the multilayer grating bearing cylinder; or preparing the single-layer grating cylinders according to the steps, and then assembling the single-layer grating cylinders into the multilayer grating bearing cylinder. The preparation method for the multilayer grating bearing cylinder made from metal or engineering plastic comprises the following steps: preparing a casting mould for the disassembly components of the single-layer grating cylinders, melting and casting, welding, and then assembling the single-layer grating cylinders into the multilayer grating bearing cylinder; or moulding in one step by a 3D printing technology. The multilayer grating bearing cylinder has the characteristics of good structural stability, light mass, high mechanical properties, difficulty of structural overall buckling instability, simple and practicable preparation method, and low cost.
Owner:NAT UNIV OF DEFENSE TECH

Method for welding circumferential weld between metal thin-wall clad layer and base layer of clad pipe

The invention provides a method for welding circumferential weld between a metal thin-wall clad layer and a base layer of a clad pipe, which is used for welding circumferential weld of dual-metal clad steel pipes. The method is characterized by (A) groove processing: cleaning oil stains on the groove; (B) carrying out surfacing on the truncated edge, close to the clad layer, of the groove and coping the groove; (C) fitting up the groove of the dual-metal clad pipe; (D) root backing weld: adopting the gas tungsten arc welding method and carrying out welding along the groove of the dual-metal clad pipe under the state of argon-filled protection inside the pipe; (E) carrying out second layer welding on the root backing weld and welding the welding base layer of the dual-metal clad pipe; and (F) filled welding and cosmetic welding: wherein the welding materials are stainless steel electrodes. The method has the following effects: adopting 309 or 309Mo welding materials, thus ensuring the strength and good toughness of the weld; eliminating the gaps which probably exist between the clad layer and the base layer at the end of the groove; and increasing the effective thickness of the stainless steel layer at the groove root so that the quality of the welding joints are insensitive to misalignment, thus ensuring the corrosion resistance.
Owner:SHANGHAI HUGONG ELECTRIC WELDING MACHINE MFG

III-nitride semiconductor device and manufacturing method for same

The invention discloses an III-nitride semiconductor device and a manufacturing method for the same. The III-nitride semiconductor device comprises a nitride semiconductor layer, a passivation layer, a source, a drain and a gate, wherein the nitride semiconductor layer and the passivation layer are grown on a substrate; the gate is positioned between the source and the drain; the nitride semiconductor layer comprises a nitride nucleating layer, a nitride buffer layer, a nitride trench layer and a nitride potential barrier layer; the passivation layer is etched in a gate area until the nitride potential barrier layer is exposed, and a groove is formed in the gate. According to the device and the method, a combined structure of a composite dielectric layer is adopted between the nitride potential barrier layer and a gate metal layer, and the composite dielectric layer comprises a nitride dielectric layer, an oxynitride dielectric layer and an oxide dielectric layer, which are sequentially formed from the substrate, so that the increase of interface state density is avoided; compared with a conventional III-nitride semiconductor device with a single oxide dielectric layer, the III-nitride semiconductor device with the composite dielectric layer has the advantage that the electric leakage and current collapse effects of the semiconductor device can be simultaneously reduced.
Owner:ENKRIS SEMICON

Centrally symmetric silicon carbide (SiC) single crystal growing device and method

The invention relates to a centrally symmetric silicon carbide (SiC) single crystal growing device. The growing device comprises a graphite crucible with a cover, wherein the bottom of the graphite crucible is connected with a rotating system which rotates the graphite crucible; the rotating system comprises a rotating tray, a center rotating rod and a driving device which drives the center rotating rod to move actively; the driving device is in sealing connection with a vacuum growth cavity by a tee connector; the center rotating rod passes through the tee connector to be connected with the driving device. According to the growing device disclosed by the invention, the bottom of the graphite crucible is connected with the rotating system which rotates the graphite crucible, when the rotating system is used, the rotation speed of the center rotating rod is 1 to 60 revolutions per minute; a non-centrosymmetric thermal field caused by spiral induction coils and thermal insulation is avoided; a centrosymmetric thermal field is constructed, and the transmission of substances is in central axial symmetry, so that the obtained crystal is centrally symmetric; the thicknesses of all edges are identical, and the use ratio of crystal materials is improved.
Owner:SHANDONG UNIV

Drop panel jack-in wrought steel hook tail frame

The invention discloses a splint inserted type coupler tail frame of forging steel, which is additionally provided with a forging steel splint based on a forging steel frame body provided with an upper pin hole and a lower pin hole; the two sides of the lower pin hole of the forging steel frame body are respectively provided with an L-shaped slideway; the two sides of the forging steel splint are respectively provided with a reversed L-shaped slide strip corresponding to the L-shaped slideway; the forging steel splint inserts a seal cover at the position of the lower pin hole of the forging steel frame body by the reversed L-shaped slide strip and the L-shaped slideway. The forging steel frame body includes a U-shaped forging steel framework and two side forging steel plates; the two side forging steel plates are respectively welded on the two sides at the front end of the U-shaped forging steel framework; the two L-shaped slideways are simultaneously forged and shaped with the U-shaped forging steel framework or welded on the lower frame plates at two sides of the lower pin hole; a locating mechanism is arranged between the forging steel splint and the forging steel frame body. A lug boss with an incline plane is arranged on the forging steel splint. The splint inserted coupler type tail frame of the forging steel has the advantages of reasonable design, high mechanical intensity, convenient loading and unloading, being capable of effectively preventing the coupler tail pin from falling off, higher framework intensity, etc. The splint inserted type coupler tail frame of the forging steel is applicable to be used in traction buffer device of a delivery truck, in particular to a delivery truck of 60tons.
Owner:南京中盛铁路车辆配件有限公司
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