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vertically magnetized mtj device

A vertical magnetization and device technology, applied in the direction of magnetic field controlled resistors, etc., can solve the problems of reduced erasable times, MTJ breakdown, increased power consumption, etc., to reduce the write current, increase the effective thickness, and reduce the size Effect

Active Publication Date: 2021-09-21
CETHIK GRP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the ultra-small-diameter MTJ increases the thickness of the free layer, the write current and write voltage of STT-MRAM based on this ultra-small-diameter MTJ are further increased, which increases power consumption, which in turn easily causes MTJ breakdown and reduces the number of erasable writes

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example 1

[0041] The MTJ device with vertical magnetization, from top to bottom, is a thermally stable enhancement layer, a free layer, a tunnel layer and a fixed layer. The diameter D of the MTJ device is 10nm, and the material of the thermally stable enhancement layer is Fe 0.5 Rh 0.5 , Fe atoms and Rh atoms each account for 50% of the total number of atoms, and its thickness is 9nm; the material of the free layer is FeB, and its thickness is 14nm; the material of the tunnel layer is HfO 2 , and its thickness is 0.6nm; the pinned layer includes a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the material of the reference magnetic layer is CoFe, and its thickness is 2nm, and the structure of the synthetic antiferromagnetic pinning layer is [Pd( 0.6) / Co(0.4)] 8 / Ir(0.4) / [Co(0.4) / Pd(0.6)] 4 Multi-layer film structure, the value in parentheses indicates the corresponding film thickness, the unit is nm, the value outside the brackets, such as 8,4, indi...

example 2

[0043] The MTJ device with vertical magnetization, from top to bottom, is a thermally stable enhancement layer, a free layer, a tunnel layer and a fixed layer. The diameter D of the MTJ device is 12nm, and the material of the thermally stable enhancement layer is Fe 0.5 Rh 0.45 Pt 0.05 , Fe atoms account for 50% of the total number of atoms, Rh atoms account for 45% of the total number of atoms, Pt atoms account for 5% of the total number of atoms, and its thickness is 10nm; the material of the free layer is CoFeB, and its thickness is 16nm; the material of the tunnel layer is MgO with a thickness of 0.8nm; the pinned layer includes a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the material of the reference magnetic layer is CoFeB with a thickness of 2nm, and the structure of the synthetic antiferromagnetic pinning layer is [Pt (0.4) / Co(0.4)] 4 / Ru(0.4) / [Co(0.4) / Pt(0.4)] 2 Multi-layer film structure, the value in parentheses indicates t...

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Abstract

The present invention provides a vertically magnetized MTJ device, comprising: a thermal stability enhancement layer, a free layer, a tunnel layer and a fixed layer stacked in sequence, wherein the ratio of the thickness of the free layer to the diameter of the MTJ device is 0.75-2; The thermal stability enhancement layer has a phase change characteristic, when the temperature is lower than the phase transition temperature, the thermal stability enhancement layer is an antiferromagnetic phase, and when the temperature is higher than the phase transition temperature, the thermal stability enhancement layer is a ferromagnetic phase Mutually. The invention can reduce the writing current of the STT-MRAM based on the ultra-small-diameter MTJ device.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a vertically magnetized MTJ device. Background technique [0002] The vertically magnetized magnetic tunnel junction MTJ has the advantages of low write energy and scalability, and has been proven to be the most suitable magnetization configuration for the development of MRAM (Magnetic Random Access Memory, magnetic memory). The latest research has found that the thickness of the free layer is greater than the radius of the MTJ can be used for vertically magnetized MTJ. This technology uses the shape anisotropy of the free layer to induce the magnetization direction of the free layer to be perpendicular to the film surface, thereby obtaining a vertically magnetized MTJ device. This type of MTJ device has an ultra-small diameter, and the diameter can be reduced to 10nm or smaller. In order to obtain such an ultra-small-diameter MTJ device, it is necessary to increase the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08
CPCH10N50/10
Inventor 何世坤宫俊录
Owner CETHIK GRP
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