Organic light emission diode device and fabrication method thereof
An electroluminescent device, electroluminescent technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problem that polarizing film is easily affected by humidity and ambient temperature, low contrast and display clarity of OLED device , the problem of high manufacturing cost
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Embodiment 1
[0063] A method for preparing an organic electroluminescent device, comprising the following steps:
[0064] (1) Place the glass substrate on a 1×10 -4 In the vacuum coating chamber of Pa, a metal Ag film with a thickness of 200nm was prepared on the surface of the substrate by vacuum evaporation as a reflective electrode;
[0065] (2) Vacuum evaporation is used to evaporate a layer of CuPc film on the reflective electrode to obtain an active crystallization layer with a thickness of 20nm. The substrate temperature is 150°C and the evaporation rate is 1nm / s; Next, evaporate a layer of NPB film to obtain an induced crystallization layer with a thickness of 20nm and an evaporation rate of 1nm / s; after the preparation, cool to 25°C at a rate of 20°C / min;
[0066] (3) A layer of ITO film with a thickness of 100nm was sputtered on the surface of the crystalline organic layer by magnetron sputtering as the first transmission electrode;
[0067] (4) Prepare a light-emitting functio...
Embodiment 2
[0072] The difference between this embodiment and embodiment 1 is that the thickness of the NPB thin film of the induced crystallization layer is 40nm, and after the crystalline organic layer is prepared, it is cooled to 25°C at a rate of 10°C / min.
Embodiment 3
[0074] The difference between this embodiment and Example 1 is that the thickness of the active crystallization layer CuPc film is 30nm, the thickness of the induced crystallization layer NPB film is 30nm, and after the crystalline organic layer is prepared, it is cooled to 25°C at a rate of 5°C / min. ℃.
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