Control method for utilizing external charging structure to charge polysilicon
A control method, polysilicon technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of slow handling, time-consuming and labor-intensive charging process, etc., and achieve the effect of charging outside the crucible furnace
Inactive Publication Date: 2014-12-31
ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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Problems solved by technology
In order to prevent damage to the quartz crucible and raw material debris falling into the thermal field and affecting the service life of the thermal field, the material must be placed slowly and gently, resulting in time-consuming and laborious loading process
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[0022] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0023] Such as figure 1 , figure 2 , image 3 As shown, an external charging structure is used to connect and seal the quartz crucible 8 and the vacuum cover 5, and then hoist the whole into or out of the thermal field of the single crystal furnace. The vacuum cover 5 is provided with a lifting ring 4 and an air inlet and outlet, the air inlet and outlet are connected with a vacuum valve 3, the other end of the vacuum valve 3 is connected to the vacuum pump 1 through the bellows 2, and the vacuum valve 3 is used to control the opening and closing of the air inlet and outlet; The vacuum cover 5 is provided with a special L-shaped sealing ring 7, and is sealed and connected with the quartz crucible 8 by the sealing ring 7. The vacuum pump 1 is used to evacuate the sealed cavity formed by the quartz crucible 8 and the vacuum cover 5; the vacuum ...
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The invention relates to auxiliary equipment of czochralski silicon single crystal growth equipment, and aims at providing a control method for utilizing an external charging structure to charge polysilicon. The main body of the external charging structure comprises a seed crystal system and a rotary mechanism, and the control method employs the external charging structure to perform polysilicon charging. When the thermal filed of a single crystal furnace is 18-24 inch, all values need to satisfy the following formulas: G1>=G2+G3, G / 2>=G2+G3, and F>=K(G2+G3), wherein G is the weighing scope of a weighing sensor, G1 is the load of a wire rope, G2 is the mass of a polysilicon raw material, G3 is the total mass of a quartz crucible and a vacuum cap, F is pressure generated by a pressure value P on a vacuum meter, and K is safety coefficient. According to the control method, extra hoisting auxiliary equipment does not need adding, the inherent seed crystal system of the single crystal furnace and the rotary mechanism of an auxiliary furnace chamber are utilized, and charging outside a crucible furnace is effectively realized.
Description
technical field [0001] The invention relates to auxiliary equipment for Czochralski silicon single crystal growth equipment, in particular to a control method for polysilicon charging by using an external charging structure. Background technique [0002] Crystalline silicon materials are often used as initial materials for integrated circuits, and the typical method of producing single crystal silicon is the Czochralski method. The single crystal furnace is a necessary equipment for the process of converting polysilicon into single crystal silicon. The single crystal furnace Czochralski method is to melt the polysilicon raw material in a quartz crucible. After the polysilicon is completely melted and the temperature reaches equilibrium, the rod-shaped single crystal silicon is slowly put into the liquid surface, so that a part is soaked in the solution. At a suitable temperature, The silicon atoms in the silicon melt will crystallize on the surface of the solution with its ...
Claims
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IPC IPC(8): C30B15/20C30B29/06
Inventor 朱亮王巍倪军夫孙明沈兴潮
Owner ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL