Common electrode of crimping type insulation power semiconductor module

Abstract

The invention relates to a common electrode of a crimping type insulation power semiconductor module. The common electrode is provided with an upper bending part and a lower bending part, wherein the two ends of the lower bending part are correspondingly provided with notches which are used for preventing the common electrode from forming an extrusion part in the bending and shaping process, the outer wall of the lower bending part is provided with a groove, and the groove is used for connecting the notches at the two ends, and is used for preventing the common electrode from forming a protruding part in the bending and forming process; the two ends of the upper bending part are correspondingly provided with notches which are used for preventing the common electrode from forming an extrusion part in the bending and shaping process, the outer wall of the upper bending part is provided with a groove, and the groove is used for connecting the notches at the two ends, and is used for preventing the common electrode from forming a protruding part in the bending and forming process. The common electrode has the advantages that the two sides of the bending parts of the common electrode are additionally provided with four notches, and the two grooves are punched or milled, so the crushing rate is greatly reduced; the qualified rate of insulation voltage reaches 98% to 100%, so the finished rate of the whole module in the production process is greatly improved.

Description

technical field [0001] The invention relates to a common electrode of a crimping insulating type power semiconductor module. Background technique [0002] There are two types of power semiconductor modules: welding type and crimping type, and there are two types of insulating type and non-insulating type. figure 1 A schematic diagram of the internal structure of a common crimping insulation type module is shown. It press-mounts power semiconductor chips (rectifiers, thyristors, GRT, NOSFET, IGBT, etc.) slice (Al 2 o 3 , AlN, BeO, etc.) for heat conduction and electrical insulation, when the module is working, the copper base plate is not charged. The insulation voltage VISO between each electrode and the copper base plate should reach more than 2500V (A·C) to ensure the safety of people's lives and property. Since the connection between the chips has been completed inside the module, and the copper base plate is not charged, the designer of the whole machine (device) ca...

AI Technical Summary

Problems solved by technology

There are two defects. One is that there is a protrusion at the bend, and the size d of the protrusion is 0.1 mm to 0.3 mm, and the crystal structure is damaged and the hardness increases.

[0009] To sum up, in addition to high-performance chips, the yield rate of crimp-type insulating modules also has high requirements for structural parts. Among them, the requirements for common electrodes are even higher, but they are seldom paid attention to by people. , even if you pay attention to it, you haven't found its vital point

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