Heating device for hydride vapor phase epitaxy (HVPE) growth

A hydride gas phase, heating device technology, applied in the direction of single crystal growth, crystal growth, chemical reactive gas, etc., can solve the problem of poor temperature uniformity, and achieve the effect of uniform temperature, large volume, and temperature realization.

Inactive Publication Date: 2015-01-07
SINO NITRIDE SEMICON +1
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature uniformity of this structure is poor (the temperature in the central area of ​​the furnace body is lower, and the temperature near the inner wall of the furnace is higher), and when it is used for the growth of large-area materials, the impact is particularly prominent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heating device for hydride vapor phase epitaxy (HVPE) growth
  • Heating device for hydride vapor phase epitaxy (HVPE) growth
  • Heating device for hydride vapor phase epitaxy (HVPE) growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The present invention proposes a heating device for hydride vapor phase epitaxy (HVPE) growth, such as figure 1 As shown, the heating device includes a heating furnace and a heating module 11 in the furnace; the heating furnace includes a first heating temperature zone 3, a second heating temperature zone 4, a third heating temperature zone 5, a fourth heating temperature zone 6, The fifth heating temperature zone 7 and the heating furnace body 1 and the heating furnace shell 2 .

[0019] Such as figure 1 As shown, the upper and lower ends of the heating furnace are shorter, the first heating temperature zone 3 and the fifth heating temperature zone 7 are auxiliary heating temperature zones with independent temperature control, which are used to preheat the incoming gas and prevent premature formation of chlorination Ammonium dust helps maintain the stability of the temperature field inside the heating furnace.

[0020] Such as figure 1 As shown, between the upper an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a heating device for hydride vapor phase epitaxy (HVPE) growth. The heating device comprises five heating temperature regions, an in-furnace heating module, a heating furnace body and a heating furnace shell, wherein the heating furnace body is divided into an auxiliary heating temperature region and a material growing heating constant-temperature region; each heating temperature region is provided with a plurality of heating modules and internal temperature sensors thereof. With the adoption of the heating device, each heating module and an internal temperature sensor thereof are respectively connected with an automatic temperature controlling circuit, heating power of each heating module is reasonably regulated by the automatic temperature controlling circuit, and combined with a type and a heating mode of each heating module set in the each heating temperature region, temperature of each temperature region is independently and precisely controlled in a preset temperature range, thus realizing uniform and stable temperature distribution in an in-furnace temperature field. The heating device is particularly suitable for growth of materials in large-area region.

Description

technical field [0001] The invention relates to the field of semiconductor industry material growth, in particular to a heating device used in the field of hydride vapor phase epitaxy (HVPE) growth. Background technique [0002] The application range of heating furnace is very wide, including melting, high temperature forging, material growth, high temperature processing and so on. The main principle is to increase the temperature through different heating methods, control the preset temperature, make the raw materials undergo physical or chemical reactions at high temperatures, or change the molecular structure of the processed raw materials at high temperatures, so as to achieve the purpose of processing or production. [0003] With the development of semiconductor industry technology, products in the field of semiconductor industry material growth are constantly updated, and the growth process has higher and higher requirements for temperature field control. In the field ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B25/10C30B25/16
Inventor 张茶根张俊业刘鹏赵红军童玉珍张国义
Owner SINO NITRIDE SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap