Magnetic Sensor

A magnetic field sensor, thin film technology, applied in instruments, electric solid-state devices, semiconductor devices, etc., can solve the problem of inability to have stable electrical characteristics, and achieve the effect of controlling sensitivity

Active Publication Date: 2015-01-07
AU OPTRONICS CORP
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] A magnetic field sensor with a field effect transistor structure using a semiconductor thin film is known and can be used in various machines. However, since the semiconductor film is not a single crystalline substance, a magnetic field sensor with a field effect transistor structure using a semiconductor thin film cannot be used as Semiconductor substrates generally have stable electrical characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic Sensor
  • Magnetic Sensor
  • Magnetic Sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Hereinafter, a mode for implementing the present invention will be described with reference to the drawings. Such as figure 1 with figure 2 As shown, in the magnetic field sensor 1 in an embodiment of the present invention, on a substrate 1A such as a resin substrate or a glass substrate, a semiconductor thin film 2, a drain 3, and a source constituting a field effect transistor are provided with an insulating film 1B interposed therebetween. The pole 4 and the gate 5 are additionally provided with a first Hall electrode 6 and a second Hall electrode 7. According to the magnetic field sensor 1 according to the drain voltage applied to the drain 3 and the gate voltage Vgs applied to the gate 5, there will be a channel for the drain current Ids to pass through the semiconductor film 2 between the drain 3 and the source 4 Area 20. In addition, when an external magnetic field exists in the channel region 20, the magnetic field sensor 1 can generate a Hall voltage Vh betwee...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a magnetic field sensor using a semiconductor film field effect transistor structure and capable of controlling flexibility appropriately. The magnetic sensor includes a semiconductor film, a drain electrode, a source electrode, a grid electrode, a first Hall electrode and a second Hall electrode. Due to drain electrode voltage applied to the drain electrode and the grid electrode applied to the grid electrode, a channel area allowing drain electrode current to flow through the semiconductor film may exist between the drain electrode and the source electrode. Hall voltage may be generated between the first Hall electrode and the second Hall electrode due to the drain electrode current and the magnetic field in the channel area. The value of the grid electrode voltage applied to the grid electrode is greater than the minimum permit grid electrode voltage value and is not less than a low voltage range of the minimum permit grid voltage value.

Description

Technical field [0001] The present invention relates to a magnetic field sensor using a semiconductor film. Background technique [0002] In the past, an element (Hall element) using the Hall effect has been used as a magnetic field sensor. If a magnetic field is applied to the current flowing in the element, the magnetic field sensor generates an electromotive force (Hall voltage) in a direction perpendicular to the direction of the current and the direction of the applied magnetic field. Therefore, the magnetic field can be measured by measuring the Hall voltage. [0003] It is known that a magnetic field sensor with a field-effect transistor structure using a semiconductor thin film can be used in various machines. However, because the semiconductor thin film is not a single crystal, a magnetic field sensor with a field-effect transistor structure using a semiconductor thin film cannot be used as such. Semiconductor substrates generally have stable electrical characteristics. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22
CPCG01R33/066
Inventor 小泽德郎郭志彻青木幸司木村睦松本贵明吉川朗登
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap