White organic light-emitting device and preparation method thereof
An electroluminescence and white technology, which is applied in the field of white organic electroluminescence devices and their preparation, and can solve the problems of low color recovery coefficient and insufficient coverage.
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[0076] The present invention also provides a method for preparing a white organic light-emitting device described in the above technical solution, comprising the following steps:
[0077] providing an anode layer on the substrate;
[0078] On the surface of the anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole block-electron transport layer, a cathode modification layer and a cathode layer are sequentially evaporated to obtain a white organic Light emitting devices.
[0079] The invention provides a substrate on which an anode layer is arranged. In the present invention, the substrate is consistent with the substrate described in the above technical solution, and will not be repeated here. In the present invention, the anode material provided on the substrate is preferably etched to form a strip electrode on the substrate, and an anode layer is obtained...
Embodiment 1
[0097] First, the ITO anode layer on the ITO glass is laser-etched into a strip electrode, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven; then the dried substrate is placed in a pre-treatment vacuum Chamber, under the atmosphere with a vacuum degree of 10Pa, the ITO anode is subjected to low-pressure plasma treatment with a voltage of 400 volts for 3 minutes, and then transferred to the organic evaporation chamber;
[0098] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; TAPC hole transport-electron blocking layer 4 with a thickness of 40nm was evaporated at a rate of 0.05nm / s; PQ was evaporated at a rate of 0.0013nm / s 2 Ir (dpm), 0.0035nm / s rate evaporation Ir (ppy) and 0.05nm / s rate evaporation TcTa obtain 5nm thick hole-dominated light-emitting layer 5; with 0.0001nm / s ra...
Embodiment 2
[0106] First, the ITO anode layer on the ITO glass is laser-etched into strip electrodes, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven. Then put the dried substrate into the pretreatment vacuum chamber, and then transfer the ITO anode to the organic evaporation chamber after a 3-minute low-pressure plasma treatment with a voltage of 400 volts in an atmosphere with a vacuum degree of 10 Pa;
[0107] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; TAPC hole transport-electron blocking layer 4 with a thickness of 40nm was evaporated at a rate of 0.05nm / s; PQ was evaporated at a rate of 0.0012nm / s 2 Ir(dpm), 0.003nm / s rate evaporation Ir(ppy) 3 Evaporating mCP at a rate of 0.05nm / s and 0.05nm / s to obtain a 5nm-thick hole-dominated light-emitting layer 5; CzSi obtains a 10nm-t...
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