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A kind of white organic electroluminescence device and preparation method thereof

An electroluminescence, electromechanical technology, applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., which can solve the problems of insufficient coverage and low color recovery coefficient.

Active Publication Date: 2017-04-19
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device has high luminous efficiency, but the characteristics of double-peak emission lead to insufficient coverage of the spectrum of the device in the white light region, so the color recovery coefficient is low

Method used

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  • A kind of white organic electroluminescence device and preparation method thereof
  • A kind of white organic electroluminescence device and preparation method thereof
  • A kind of white organic electroluminescence device and preparation method thereof

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preparation example Construction

[0076] The present invention also provides a method for preparing a white organic light-emitting device described in the above technical solution, comprising the following steps:

[0077] providing an anode layer on the substrate;

[0078] On the surface of the anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole block-electron transport layer, a cathode modification layer and a cathode layer are sequentially evaporated to obtain a white organic Light emitting devices.

[0079] The invention provides a substrate on which an anode layer is provided. In the present invention, the substrate is consistent with the substrate described in the above technical solution, and will not be repeated here. In the present invention, the anode material provided on the substrate is preferably etched to form a strip electrode on the substrate, and an anode layer is obtained...

Embodiment 1

[0097] First, the ITO anode layer on the ITO glass is laser-etched into a strip electrode, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven; then the dried substrate is placed in a pre-treatment vacuum Chamber, under the atmosphere with a vacuum degree of 10Pa, the ITO anode is subjected to low-pressure plasma treatment with a voltage of 400 volts for 3 minutes, and then transferred to the organic evaporation chamber;

[0098] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; TAPC hole transport-electron blocking layer 4 with a thickness of 40nm was evaporated at a rate of 0.05nm / s; PQ was evaporated at a rate of 0.0013nm / s 2 Ir (dpm), 0.0035nm / s rate evaporation Ir (ppy) and 0.05nm / s rate evaporation TcTa obtain 5nm thick hole-dominated light-emitting layer 5; with 0.0001nm / s ra...

Embodiment 2

[0106] First, the ITO anode layer on the ITO glass is laser-etched into strip electrodes, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven. Then put the dried substrate into the pretreatment vacuum chamber, and then transfer the ITO anode to the organic evaporation chamber after a 3-minute low-pressure plasma treatment with a voltage of 400 volts in an atmosphere with a vacuum degree of 10 Pa;

[0107] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; TAPC hole transport-electron blocking layer 4 with a thickness of 40nm was evaporated at a rate of 0.05nm / s; PQ was evaporated at a rate of 0.0012nm / s 2 Ir(dpm), 0.003nm / s rate evaporation Ir(ppy) 3 Evaporating mCP at a rate of 0.05nm / s and 0.05nm / s to obtain a 5nm-thick hole-dominated light-emitting layer 5; CzSi obtains a 10nm-t...

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Abstract

The invention provides a white organic electroluminescent device, comprising a substrate, an anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole-block- Electron transport layer, cathode modification layer and cathode layer; the electron-dominated light-emitting layer includes: 0.05wt% to 2.0wt% organic sensitizing material, the organic sensitizing material is a transition metal complex with energy level matching; 8.0 Wt%-25.0wt% of the blue organic luminescent material; the rest of the electronic organic host material. In the present invention, the electron-dominated luminescent layer is doped with an organic sensitizing material, and the organic sensitizing material plays the role of a deep carrier binding center and an energy transfer ladder, thereby widening the luminescent range and accelerating the transition from the host material to the luminescent material. energy transfer, so that the white organic electroluminescent device provided by the present invention has higher efficiency and color recovery coefficient.

Description

technical field [0001] The invention relates to the technical field of electroluminescence, in particular to a white organic electroluminescence device and a preparation method thereof. Background technique [0002] An organic electroluminescent device is a self-luminous device that generates light when charges are injected into an organic film between a hole injection electrode (anode) and an electron injection electrode (cathode), and the electrons and holes combine and then annihilate . Organic electroluminescent devices have the characteristics of low voltage, high brightness, wide viewing angle, etc., so organic electroluminescent devices have been developed rapidly in recent years. Among them, white organic electroluminescent devices have become a research hotspot due to their application prospects in full-color display and solid-state lighting. [0003] For a long time, trivalent iridium complexes have been regarded as ideal organic electroluminescent materials by a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/146H10K85/342H10K50/121H10K50/80H10K50/00H10K71/00
Inventor 周亮张洪杰李成宇
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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