Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are disclosed. An example semiconductor device may include: a substrate; first and second back gates formed on the substrate; first fins respectively formed on opposite first and second sides of the first back gate, and A second fin formed on only the first side surface of the second back gate; a first back gate dielectric layer sandwiched between the first back gate and the first fin, and a second fin sandwiched between the second back gate and the second fin the second back gate dielectric layer; and the first gate stack formed on the substrate intersecting the first back gate and the first fin, and the first gate stack formed on the substrate intersecting the second back gate and the second fin There are two gate stacks, and each gate stack is isolated from the corresponding back gate by a dielectric layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device including fin structures having different driving capabilities and a method of manufacturing the same. Background technique [0002] Compared with conventional transistors, Fin Field Effect Transistors (FinFETs) are increasingly used due to their faster switching speed, higher current density, and better suppression of short-channel effects. In a typical FinFET, the channel is provided in a semiconductor fin (fin). Fins generally comprise single crystal semiconductor material having a substantially rectangular cross-section. The height of the fins is usually greater than the width of the fins to achieve higher conduction current per unit area. [0003] Although FinFETs offer improved performance over conventional metal oxide semiconductor field effect transistors (MOSFETs), they also present some design challenges. Specifically, convention...

AI Technical Summary

Problems solved by technology

Therefore, it is difficult for conventional technologies to realize FinFETs with different drive capabilities

[0007] On the other hand, FinFETs do not effectively control their threshold voltage

Also, as devices continue to be miniaturized, the fins become thinner, making them prone to collapse during fabrication

Images