Coil supporting device and plasma processing equipment

Abstract

The invention relates to a coil supporting device and plasma processing equipment. The coil supporting device is used for supporting a coil arranged above the top part of a reaction chamber. The coil supporting device comprises a shielding cover, a coil support and an elevating driving mechanism. The shielding cover is fixed at the top part of the reaction chamber. The coil and the coil support used for fixing the coil are arranged in the internal part of the shielding cover. The elevating driving mechanism is fixed above the top part of the shielding cover and used for driving the coil support and the coil fixedly connected with the coil support to move in an elevating way relative to the reaction chamber. According to the coil supporting device, height of the coil relative to the reaction chamber can be adjusted by driving the coil to move in the elevating way so that possible installing error and processing error of the coil can be eliminated, distribution of a radio frequency magnetic field in the reaction chamber can also be flexibly and accurately adjusted, and thus uniformity of the technology can be enhanced.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a coil support device and plasma processing equipment. Background technique [0002] At present, in the fields of plasma etching, plasma enhanced chemical vapor deposition, etc., people widely use capacitive coupling, inductive coupling, and electron cyclotron resonance to obtain plasma. Among them, in the inductively coupled plasma equipment, the application of the toroidal radio frequency coil is very extensive, and, in the process, the vertical distance between the radio frequency coil and the substrate placed in the reaction chamber and the various components in the radio frequency coil The vertical spacing between the turns has a great influence on the density and distribution of the plasma formed inside the reaction chamber, and ultimately affects the process performance such as etching rate, deposition rate and process uniformity. Therefore, in actual I...

AI Technical Summary

Problems solved by technology

[0006] Since the above-mentioned height adjustment mechanism 72 can only drive the calibration coil 70 close to or away from the radio frequency coil 54, but cannot drive the radio frequency coil 54 close to or away from the reaction chamber 10, this will not only reduce the flexibility of the plasma processing device, but also due to the above-mentioned height adjustment The mechanism 72 cannot adjust the height of the radio frequency coil 54 relative to the reaction chamber 10, so it cannot eliminate possible installation errors and processing errors of the radio frequency coil 54, resulting in low accuracy of the plasma processing device

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