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A kind of inn/lt-aln composite stress relief buffer layer technology in mocvd

A composite stress and buffer layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the improvement of warpage of epitaxial wafers has no obvious effect, etc.

Active Publication Date: 2018-03-13
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has no obvious effect on the improvement of the warpage of the epitaxial wafer.

Method used

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  • A kind of inn/lt-aln composite stress relief buffer layer technology in mocvd
  • A kind of inn/lt-aln composite stress relief buffer layer technology in mocvd
  • A kind of inn/lt-aln composite stress relief buffer layer technology in mocvd

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Experimental program
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Effect test

Embodiment 1

[0017] Such as diagram 2-1 As shown, it is the epitaxial growth scheme with GaN as the bottom layer, 1 is the substrate material layer, which can be sapphire, silicon, silicon carbide, etc.; 2 is the buffer layer; 3 is the lower GaN layer; 4 is the InN layer; 5 is LT-AlN layer; 6 is the upper GaN layer; 7 is the functional layer, which can be a quantum well structure, a two-dimensional electron gas structure, etc.

Embodiment 2

[0019] Such as Figure 2-2 As shown, it is the epitaxial growth scheme with the bottom layer of AlGaN, 1 is the substrate material layer, which can be sapphire, silicon, silicon carbide, etc.; 2 is the buffer layer; 3 is the lower AlGaN layer; 4 is the InN layer; 5 is LT-AlN layer; 6 is the upper GaN layer; 7 is the functional layer, which can be a quantum well structure, a two-dimensional electron gas structure, etc.

Embodiment 3

[0021] Such as Figure 2-3 As shown, the bottom layer is a multi-layer InN / LT-AlN composite stress relief buffer layer epitaxial growth scheme, 1 is the substrate material layer, which can be sapphire, silicon, silicon carbide, etc.; 2 is the buffer layer; 3 is the lower layer AlGaN or GaN 4 is the InN layer; 5 is the LT-AlN layer; 6 is the middle GaN layer; 7 is the InN layer; 8 is the LT-AlN layer; 9 is the upper GaN layer; Dimensional electron gas structure, etc.

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PUM

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Abstract

The invention provides an InN / LT-AlN combined stress release buffer layer technology in a MOCVD machine. A stress release layer is an important function layer during the growth of an MOCVD material, can realize a good stress release effect and improves the angularity of an epitaxial wafer and the crystal quality, thereby being especially important during the epitaxial growth of a GaN-On-Silicon heterogeneous material with a great heat mismatch and a great crystal lattice mismatch. According to the InN / LT-AlN combined stress release buffer layer technology provided by the invention, before an LT-AIN ( low-temperature-aluminum nitride) buffer layer grows, an InN function layer is firstly deposited, and accordingly, the combined stress release buffer layer is formed, such that the stress brought by heterogeneous growth is well released.

Description

technical field [0001] The invention belongs to the field of semiconductor material manufacturing, and relates to the technology of compound stress release buffer layer in the epitaxial growth of high-quality semiconductor devices. Background technique [0002] Since the substrate (Si, sapphire, silicon carbide, etc.) and the GaN epitaxial layer have different lattice mismatches and thermal expansion coefficients, internal stress will be generated in the epitaxial layer after growth. In some fields, the stress field in the epitaxial layer affects or restricts the performance of the device to varying degrees. The stress field of heteroepitaxy has become one of the perplexing problems in the semiconductor field. At present, scientific researchers have achieved breakthroughs in stress relief through different approaches. Including superlattice buffer layer technology, graded AlGaN buffer layer technology, gradient AlGaN buffer layer technology, LT-AlN (low temperature aluminu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
CPCH01L21/02458H01L21/0262
Inventor 罗睿宏张国义
Owner SINO NITRIDE SEMICON