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Semiconductor device

A semiconductor and insulator technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, output power conversion devices, etc.

Inactive Publication Date: 2015-02-04
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, drive circuits for SR motors that do not use rare-earth magnets, etc., which cannot be applied to ordinary half-bridge circuits, are also increasingly put into practical use (for example, refer to Patent Document 1).

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0020] figure 1 It is a circuit diagram showing the power semiconductor circuit according to the embodiment of the present invention. This circuit is a drive circuit for SR motors. In the drive circuit, transistors Tr1 to Tr6 are connected in series to diodes D1 to D6, respectively, and these are connected to a high-voltage power supply.

[0021] figure 2 It is a cross-sectional view showing the semiconductor device according to Embodiment 1 of the present invention. The device constitutes figure 1 The circuit surrounded by dashed lines. image 3 is along figure 2 Sectional view of line I-II. Figure 4 yes yes image 3 A cross-sectional view of the assembled device.

[0022] The grid-shaped partition portion 1 constitutes a plurality of storage portions 2 . The cooler 3 is disposed below the partition 1 . The circuit blocks such as the semiconductor block 4 , the terminal block block 5 , and the bus bar block 6 are electrically connected to each other while being h...

Embodiment approach 2

[0030] Figure 5 It is a cross-sectional view showing a semiconductor device according to Embodiment 2 of the present invention. The cooler 3 has a coolant passage 21 through which a coolant such as water passes. A cooling body 9 (radiation fin) thermally connected to the IGBT 7 of the semiconductor module 4 protrudes from the lower surface of the insulator 8 . In the state where the semiconductor module 4 is accommodated in the housing portion 2 , the cooling body 9 of the semiconductor module 4 is connected to the cooling medium path 21 to constitute a cooling system. With this structure, the IGBT 7 of the semiconductor block 4 can be efficiently cooled.

Embodiment approach 3

[0032] Figure 6 It is a cross-sectional view showing a semiconductor device according to Embodiment 3 of the present invention. The height of the semiconductor block 4 is lower than that of other circuit blocks, and the control substrate 22 for controlling the IGBT 7 is disposed on the semiconductor block 4 . The pressing plate 23 presses the control board 22 to the semiconductor block 4 via an interfering material 24 such as a spring or rubber. The pressing plate 23 is fixed to the partition 1 with screws 25 .

[0033] On the upper surface of the insulator 8 of the semiconductor block 4, the control electrode 26 electrically connected to the gate of the IGBT 7 is arranged. An output electrode 27 is provided on the back surface of the control substrate 22 so as to face the control electrode 26 .

[0034] The output electrodes 27 of the control substrate 22 pressed by the pressing plate 23 are in contact with the control electrodes 26 of the control substrate 22 to be elect...

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PUM

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Abstract

Provided is a semiconductor device in which a partition section (1) that is shaped like a grid forms a plurality of accommodating sections (2). Each of a plurality of circuit blocks such as a semiconductor block (4) and a terminal block (5) are accommodated in the accommodating section (2) and are electrically connected to each other to form a power semiconductor circuit. The semiconductor block (4) is obtained by covering an IGBT (7) with an insulator (8) in order to create a block. The collector of the IGBT (7) is connected to an electrode (12) via a metal plate (11). The electrode (12) is drawn out from inside the insulator (8) onto the side surface of the insulator (8). The terminal block (5) comprises: a power terminal (15) that is electrically connected to external electrical wiring that supplies power to the IGBT (7); and a screw hole (16) into which a screw for securing the electrical wiring is inserted.

Description

technical field [0001] The present invention relates to a semiconductor device capable of easily configuring a complicated power semiconductor circuit. Background technique [0002] A typical drive circuit for power IGBTs has a bridge structure in which IGBTs such as 2in1 structures and FWDs are mounted on the upper arm side and the lower arm side. However, drive circuits for SR motors that do not use rare-earth magnets, etc., that cannot be applied to normal half-bridge circuits are also being put into practical use (for example, refer to Patent Document 1). In addition, a technique has been proposed in which a semiconductor circuit is configured by arranging a block member with an electric circuit attached therebetween between dividing members provided in a grid pattern (for example, refer to Patent Document 2). [0003] Patent Document 1: Japanese Patent Application Laid-Open No. 11-191995 [0004] Patent Document 2: Japanese Patent Laid-Open No. 2005-260018 Contents ...

Claims

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Application Information

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IPC IPC(8): H02M7/48H02M7/00
CPCH01L2924/0002H01L23/473H02M7/003H01L25/115H01L25/18H01L2224/33H01L2224/48091H01L2224/73265H01L2224/48137H01L2924/13055H01L2924/1815H01L2924/00014H01L2924/00H01L23/04H01L23/46H01L23/50
Inventor 宫本昇
Owner MITSUBISHI ELECTRIC CORP