Method for ingoting polycrystalline silicon

A technology of polycrystalline silicon and ingot casting, which is applied in the field of solar cells, can solve the problems of low crystallization rate of silicon ingots, reduced production capacity of silicon wafers, and increased production costs, and achieve high conversion efficiency, low production costs, and good vertical growth. Effect

Inactive Publication Date: 2015-02-11
JINKO SOLAR CO LTD
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Problems solved by technology

[0005] However, in the actual production process, it was found that the above-mentioned method of high-efficiency polysilicon ingot casting consumes more energy,

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  • Method for ingoting polycrystalline silicon
  • Method for ingoting polycrystalline silicon

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[0021] As mentioned in the background art, the conventional high-efficiency polycrystalline silicon ingot casting method has high energy consumption and low crystallization rate. The inventor found that the reason for the above phenomenon is that the main means to improve the conversion efficiency of polycrystalline silicon ingots is to improve the consistency and directionality of crystal grains and reduce dislocations. Growth, and then to ensure the consistency and directionality of the crystal grains, will keep about 20mm of silicon material incompletely melted in the late stage of silicon material melting as the seed crystal during crystal growth. In the melting stage, if the method of heating the crucible as a whole to melt the silicon material during the ordinary polysilicon ingot casting is adopted, due to the fluidity of the silicon liquid, the silicon liquid will gather at the bottom of the crucible, and the solid silicon material will float on the silicon liquid, so t...

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Abstract

The invention provides a method for ingoting polycrystalline silicon, which comprises the following steps: forming a coating with first preset thickness on bottom of a crucible, wherein the coating contains solid particles, the solid particles can be at least one of quartz sand, silicon nitride powder and silicon carbide powder, spraying silicon nitride on the bottom and inside wall of the crucible; paving the broken silicon chips with second preset thickness on the bottom of the crucible, wherein the shape and size of the broken silicon chips are not same, and distributed at the bottom of the crucible, then placing the silicon material in the crucible, compressing the broken silicon chips by the silicon material, forming dent on the coating; and integrally heating the crucible until the broken silicon chips and the silicon material are fully fused. The method can ensure the high conversion efficiency of polycrystalline silicon ingot, reduce energy consumption during the production process, reduce the production cost, increase the crystalline yield rate of the silicon ingot, and increase the integral production power of the silicon chip.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for casting polycrystalline silicon ingots. Background technique [0002] With the development of science and the advancement of technology, countries all over the world pay more and more attention to energy saving, emission reduction and environmental protection. As an important part of energy saving and emission reduction projects, solar cells have been developing rapidly. [0003] Among many types of solar cells, polysilicon solar cells have been industrialized on a large scale due to their low cost. Polysilicon ingot casting is an important basic link in the polysilicon solar cell industry chain. Purified silicon raw materials can only be grown and cast After being made into silicon ingots, it can be used to produce solar cells. How to grow high-quality polysilicon at the stage of polysilicon ingot casting plays a vital role in improving the conversion efficien...

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 龙昭钦戴云林刘晓风周慧敏徐志群金浩陈康平
Owner JINKO SOLAR CO LTD
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