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non-volatile storage device

A non-volatile storage and memory technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large equipment investment in microfabrication technology

Active Publication Date: 2017-06-20
KIOXIA CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the further evolution of microfabrication technology requires a huge investment in equipment

Method used

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Embodiment Construction

[0017] Embodiments will be described below with reference to the drawings. The same reference numerals are attached to the same parts in the drawings, and their detailed descriptions are appropriately omitted, and different parts will be described. In addition, the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, and the like are not necessarily the same as the actual structure. In addition, even when the same part is shown, the mutual size or ratio may be shown differently in a drawing.

[0018] figure 1 It is a perspective view schematically showing the nonvolatile memory device according to the embodiment.

[0019] figure 2 It is a cross-sectional view showing the memory cell array 1 of the nonvolatile memory device according to the embodiment.

[0020] The nonvolatile memory device according to the embodiment is a so-called NAND flash memory, and has a three-dimensionally arranged me...

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PUM

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Abstract

The non -prone storage device involved in the embodiment has the first layer stack electrode set on the base layer, and the second layer of stacking electrodes set up with the first layer of stacked electrodes, and the number one of the 1st layer of stacking electrodes.The second semiconductor layer of the 1st semiconductor layer and the second semiconductor layer that penetrates the second layer of the electrode.Furthermore, with the storage film between the 1st layer of the stacking electrode and the 1st semiconductor layer, and the storage film between the 2nd layer stack electrode and the 2nd semiconductor layer, as well as the setting of the base layer and the prefectureThe connection between the first layer of the stacking electrode and the base layer and the second layer electrode of the base layer.The connection part is connected with one end of the first semiconductor layer and one end of the second semiconductor layer.

Description

[0001] Cross References to Related Applications [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2013-157586 (filing date: July 30, 2013). This application includes the entire content of the basic application by referring to the basic application. technical field [0003] Embodiments relate to non-volatile memory devices. Background technique [0004] A nonvolatile memory device represented by a NAND flash memory is manufactured using a semiconductor wafer process (Wafer process). Furthermore, with the development of two-dimensional miniaturization technology in the wafer process, a larger capacity, lower power consumption, and lower cost have been achieved. However, the further evolution of microfabrication technology requires a huge investment in equipment. Therefore, development of a memory device having a three-dimensional structure in which a plurality of memory layers are stacked is underway. Contents ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115
CPCH01L29/7926H10B43/35H10B43/50H10B43/27
Inventor 篠原广
Owner KIOXIA CORP