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Photoelectric testing method of a diode

A photoelectric test and diode technology, applied in the field of diodes, can solve the problems of easy burning of test probes, affecting test accuracy, increasing production costs, etc., to achieve the effects of reducing area, saving production costs and improving accuracy

Active Publication Date: 2017-07-28
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem in the prior art that the test probe is easy to burn during the test, which increases the production cost, and the test probe will block part of the light-emitting area of ​​the chip and affect the accuracy of the test, the embodiment of the present invention provides a photoelectric sensor for a diode. testing method

Method used

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  • Photoelectric testing method of a diode

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Embodiment

[0039] An embodiment of the present invention provides a photoelectric test method for diodes, which is suitable for wafer testing of diodes, see figure 2 and image 3 , the method includes:

[0040] Step 101: Determine the wafer testing pitch of the diode.

[0041] According to production needs, determine the wafer test pitch of the diode.

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Abstract

The invention discloses a photoelectric testing method of a diode, which belongs to the field of diodes. The method includes: determining the wafer test spacing of the diode; before the wafer of the diode to be tested is split, selecting a chip to be tested on the wafer of the diode to be tested according to the test spacing; The chips are respectively subjected to optoelectronic testing; the optoelectronic testing of each of the selected chips to be tested includes: connecting the first test probe to the P electrode of the current chip to be tested; connecting the second test probe to the current P electrode of the chip to be tested into the N electrode of the first chip, the first chip and the chip to be tested are both on the wafer of the diode to be tested; the first test probe and the second test probe are connected to the rated Current or rated voltage; use measuring equipment to detect the optoelectronic parameters of the chip to be tested.

Description

technical field [0001] The invention relates to the field of diodes, in particular to a photoelectric testing method for diodes. Background technique [0002] With the wide application of gallium nitride-based compound light-emitting diodes (English: Lighting Emitting Diode, referred to as: LED) in the field of display and lighting, the demand for LEDs has shown a geometric progression in recent years, which has a negative impact on the production efficiency of LEDs. and production quality put forward higher requirements. [0003] In the manufacturing process of diodes such as LEDs, it is necessary to conduct photoelectric tests on the wafers of the diodes. During the test, it is necessary to use test probes to pierce the N and P electrodes of the chip on the wafer at the same time to perform a complete photoelectric performance test. The chip needs to pass current multiple times. [0004] In the process of realizing the present invention, the inventor finds that there are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 陈建南周武
Owner HC SEMITEK SUZHOU
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