High-energy ion beam substrate treatment and vacuum vapor plating device and method
A substrate treatment and vacuum evaporation technology, applied in vacuum evaporation plating, ion implantation plating, cleaning methods and appliances, etc., can solve the problems of short service time, non-abrasive film layer, poor wear resistance, etc., and achieve enhanced cost performance Membrane quality, strong affinity, and the effect of improving the film-forming effect
Inactive Publication Date: 2015-02-25
邵海平
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Problems solved by technology
[0004] The purpose of the present invention is to provide a high-energy ion beam substrate processing and vacuum evaporation coating equipment and method to solve the problem of poor bonding force of the anti-fouling layer, non-wear resistance and uneven film layer in the prior art of traditional Chinese medicine soaking and drying. The method of evaporation coating has poor wear resistance and short service time
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[0031] figure 1 It is the first embodiment of the vacuum evaporation coating method of the present invention, comprising the following steps:
[0032] S01, evacuate the vacuum chamber containing the substrate to 4.5X10 -3 Pa to 5.5X10 -3 Pa;
[0033] S02, performing ion cleaning on the surface of the substrate;
[0034] S03, adjust the pressure in the vacuum chamber to 4.5X10 -1 Pa to 5.5X10 -1 Pa, and a layer of SiO with a thickness of 8 nm to 12 nm is formed on the surface of the cleaned substrate by intermediate frequency Si target sputtering 2 The buffer layer;
[0035] S04, the vacuum degree is 7X10 -1 Pa to 9X10 -1 Under Pa, an antifouling layer with a thickness of 15 nm to 25 nm is coated on the surface of the substrate with the SiO2 buffer layer by evaporation coating.
[0036] In the step of performing ion cleaning on the surface of the substrate, the cleaning voltage is 550V to 650V, the cleaning current is 0.4A to 0.6A, the cleaning time is 4min to 6min, an...
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Abstract
The invention relates to the field of vacuum vapor plating devices, and particularly a high-energy ion beam substrate treatment and vacuum vapor plating device and method. The method comprises the following steps: vacuumizing a vacuum chamber provided with a substrate to 4.5*10<-3>Pa to 5.5*10<-3>Pa; carrying out ion cleaning on the substrate surface; regulating the pressure in the vacuum chamber to 4.5*10<-1>Pa to 5.5*10<-1>Pa, and carrying out medium-frequency Si target sputtering on the cleaned substrate surface to generate a SiO2 buffer layer which is 8-12nm thick; and carrying out vapor plating on the substrate surface with the SiO2 buffer layer under the vacuum degree of 7*10<-1>Pa to 9*10<-1>Pa to obtain an antifouling layer which is 15-25nm thick. The substrate is firstly subjected to ion cleaning by the ion generation mechanism, so that the SiO2 buffer layer can be generated on the treated substrate by medium-frequency Si target sputtering. The SiO2 buffer layer has high affinity, and can firmly combine the antifouling layer with the substrate, thereby solving the problems of poor wear resistance and short service time as well as the problems of poor binding force, low abrasion resistance and nonuniform film layer in the antifouling layer.
Description
technical field [0001] The invention relates to the field of vacuum evaporation coating equipment, in particular to a high-energy ion beam substrate processing and vacuum evaporation coating equipment and method. Background technique [0002] Most of the existing antifouling coatings use the solution of soaking and drying in liquid medicine. Specifically, the substrate is soaked in liquid medicine for several minutes and then taken out, and then heated and dried in a drying furnace. The disadvantage of this method is that the antifouling layer is combined with Poor strength, wear resistance and uneven film. At present, the use of this method is less and less, and there is another method in the prior art, which is the vacuum evaporation coating method. However, in normal use, the film layer will generally be worn within 30 days, and the wear resistance is poor. [0003] SUMMARY OF THE INVENTION [0004] The object of the present invention is to provide a high-energy io...
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IPC IPC(8): C23C14/34C23C14/10B08B7/00
CPCC23C14/022C23C14/0036C23C14/024C23C14/10
Inventor 邵海平
Owner 邵海平