Method for building AlGaN/GaN HEMT device direct current model

A DC model and device technology, applied in instrumentation, calculation, electrical digital data processing, etc., can solve problems affecting the accuracy of DC model of AlGaN/GaNHEMT devices, etc.

Inactive Publication Date: 2015-02-25
EAST CHINA NORMAL UNIV
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Problems solved by technology

However, when the traditional DC equivalent model is applied to AlGaN / GaN HEMT devices, the bias-related characteristics caused by gate-source voltage changes are often ignored, which affects the accuracy of the DC model of AlGaN / GaN HEMT devices.

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  • Method for building AlGaN/GaN HEMT device direct current model
  • Method for building AlGaN/GaN HEMT device direct current model
  • Method for building AlGaN/GaN HEMT device direct current model

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[0022] The present invention will be described in further detail in conjunction with the following specific examples and accompanying drawings, and the protection content of the present invention is not limited to the following examples. Without departing from the spirit and scope of the inventive concept, changes and advantages conceivable by those skilled in the art are all included in the present invention, and the appended claims are the protection scope. The process, conditions, reagents, experimental methods, etc. of implementing the present invention, except for the content specifically mentioned below, are general knowledge and common knowledge in the art, and the present invention has no special limitation content.

[0023] In the embodiment of the present invention, an AlGaN / GaN HEMT device is used as a test sample.

[0024] figure 1 A flowchart of a method for establishing a DC model of an AlGaN / GaN HEMT device according to an embodiment of the present invention, t...

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Abstract

The invention discloses a method for building an AlGaN/GaN HEMT device direct current model. The method includes the steps of a, measuring parameters of an AlGaN/GaN HEMT device S; b, extracting parasitic antenna parameters of the AlGaN/GaN HEMT device and removing influences of parasitic antenna values; c, extracting values of device transconductance parameters beta, voltage saturation parameters alpha and channel length modulation factors gamma; d, fitting beta, alpha and gamma curves changed along with gate-to-source voltage Vgs and obtaining unified expressions, changed along with Vgs, of the parameters beta, alpha and gamma; e, substituting beta, alpha and gamma expressions into a Curtice model, and obtaining the new direct current model. By means of the method, the method of building a direct current parameter and gate-to-source voltage non-linear relationship is adopted for building the new AlGaN/GaN HEMT device direct current model, the model has the gate-to-source voltage bias correlated characteristics, and the accuracy of the direct current model is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for establishing a DC model of an AlGaN / GaN HEMT (AlGaN / GaN High Electron Mobility Transistor, aluminum gallium nitride / gallium nitride high electron mobility transistor) device. Background technique [0002] Establishing the DC model of microwave active devices is the key to designing microwave nonlinear circuits (such as power amplifiers, mixers and oscillators, etc.). The nonlinear empirical analysis model refers to the model composed of lumped elements, nonlinear elements and controlled sources. It is the core part of nonlinear microwave CAD software. [0003] Commonly used HEMT (High Electron Mobility Transistor, high electron mobility transistor) DC equivalent circuit models include STATZ model, CURTICE model, TRIQUINT model, MATERKA model, TAJIAMA model, ANGELOV model and EEHEMT model. However, when the traditional DC equivalent model is applied to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 沈溧骆丹婷高建军
Owner EAST CHINA NORMAL UNIV
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