Anti-static and anti-bacterial radiation-resistant patterned fabric

An anti-radiation and anti-static technology, applied in the field of textile fabrics, can solve the problems of mechanical properties such as great differences in ductility and tensile strength, fabrics without patterns, and human health hazards, so as to improve comprehensive performance and antibacterial efficiency , harm reduction effect

Inactive Publication Date: 2015-03-04
JIANGYIN MINGPIN KNITTING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing fabrics are directly made of ordinary flat non-woven fabrics or perforated PE films. The longitudinal and transverse mechanical properties of these fabrics, such as ductility and tensile strength, are very different, that is, they are anisotropic and will Give the user a feeling of tightening the skin, especially in walking, cycling and other sports occasions, it will feel uncomfortable
In addition, people wear clothes every day to study, work and live on various occasions, and they will be exposed to various bacteria unconsciously, which will accumulate and enrich for a long time, which will cause harm to human health.
[0003] In addition, traditional fabrics for making clothes do not have patterns, and after weaving, they need to be dyed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Anti-static and anti-bacterial radiation-resistant patterned fabric

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Embodiment Construction

[0015] see figure 1 , the present invention relates to an antistatic, antibacterial and anti-radiation fabric with a pattern, which includes a bottom layer 4, and a base layer 1 is compounded on the surface of the bottom layer 4, and the base layer 1 is made by connecting warp yarns and weft yarns, and the warp yarns and weft yarns are made of The upper surface of the base layer 1 is bonded with a layer of aluminum alloy film 2 through an adhesive, and an antistatic layer 3 is arranged on the aluminum alloy film 2. The antistatic layer 3 is composed of warp yarns and The weft yarns are mutually woven, the warp yarns are made of cotton yarns, the weft yarns are made of conductive fibers, and the conductive fibers are striped with a spacing of 5-10mm.

[0016] In a preferred embodiment of the present invention, an antistatic agent is added to the antistatic layer 3 . It can eliminate all kinds of static electricity accumulation and bacteria caused by friction on the fabric, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The invention relates to an anti-static and anti-bacterial radiation-resistant patterned fabric. The anti-static and anti-bacterial radiation-resistant patterned fabric comprises a bottom layer (4), wherein a base layer (1) is compounded on the surface of the bottom layer and formed by mutually connecting warp yarns and weft yarns, which are both formed by spinning nano silver fibers; an aluminium alloy film (2) is bonded to the upper surface of the base layer through an adhesive; an anti-static layer (3) is arranged on the aluminium alloy film and formed by weaving warp yarns and weft yarns, the warp yarns are cotton yarns, and the weft yarns are conductive fibers; the bottom layer is made of a fabric, the fabric is formed by interweaving warp yarns and weft yarns and adopts the 3/1 woven twill tissue structure, the warp yarns are 800D terylene super bright FDY, the weft yarns are 800D terylene super bright FDY, the warp density is 25/cm, the weft density is 16/cm, and the warp yarns are Z-twisted by 180/m. As the fabric changes from the weave structure to patterns, and after fabric manufacture, dyeing is not needed after fabric manufacture, and meanwhile, the fabric is relatively stiff.

Description

technical field [0001] The invention relates to a textile fabric, in particular to an antistatic antibacterial anti-radiation fabric with patterns. It belongs to the field of textile technology. Background technique [0002] With the further development of electrical equipment technology, radiation can be seen everywhere around us, whether it is mobile phones, computers, printers for work, or microwave ovens, electric blankets, hair dryers, etc. at home, will produce a certain amount of radiation, which is harmful to human health It has a threatening effect, especially for the elderly and children with weak resistance. In addition, working in a radiation environment for a long time will cause symptoms such as insomnia, dreaminess, and low immunity. At the same time, in the electronics industry that requires high precision, it is very important to strengthen the anti-static performance requirements of fabrics. Most of the existing fabrics are directly made of ordinary flat ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/02B32B15/09B32B15/14B32B27/02B32B33/00A41D31/02D03D13/00D03D15/00D03D15/217D03D15/283D03D15/533D03D15/547
CPCA41D31/02B32B5/02B32B7/12B32B9/02B32B9/047B32B15/02B32B15/14B32B15/20B32B2307/212B32B2307/21B32B2307/7145B32B2262/0276B32B2437/00
Inventor 许永新
Owner JIANGYIN MINGPIN KNITTING
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