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A kind of mgznos quaternary zno alloy semiconductor material and preparation method thereof

A semiconductor and alloy technology, applied in the field of photoelectric semiconductor material preparation, can solve the problems of preparing MgZnOS quaternary alloy semiconductor materials that have not been seen yet, and achieve the effect of improving electron and hole characteristics, simple equipment and operation process, and easy control

Active Publication Date: 2017-02-01
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are some reports on MgZnO and ZnOS semiconductor materials, but there is no report on the preparation of MgZnOS quaternary alloy semiconductor materials.

Method used

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  • A kind of mgznos quaternary zno alloy semiconductor material and preparation method thereof
  • A kind of mgznos quaternary zno alloy semiconductor material and preparation method thereof
  • A kind of mgznos quaternary zno alloy semiconductor material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh 39.8336 g of ZnS powder and 0.1664 g of MgO powder according to the molar ratio ZnS:MgO=99:1, mix them, add 24 g of deionized water and ball mill for 4 hours, and then vacuum dry at 110°C for 8 hours. Add 2 grams of deionized water to the dried powder, grind and stir thoroughly, and then press it into a circular green sheet with a diameter of 27.5 mm and a thickness of 2.5 mm. The blank is put into a crucible and placed in a vacuum tube furnace, and 5.0000 grams of powder with the same composition and 0.5000 grams of high-purity sulfur powder are placed around it. The vacuum tube furnace was evacuated to 0.1 Pa, and then high-purity nitrogen was introduced. Under a protective atmosphere, the temperature of the tube furnace was raised to 1100° C. and kept for 5 hours, and then naturally cooled to room temperature to obtain the desired ceramic target. The ceramic material was used as the laser ablation target material, and the substrate was ultrasonically cleaned f...

Embodiment 2

[0030] Weigh 38.9714 g of ZnS powder and 1.0286 g of MgO powder according to the molar ratio ZnS:MgO=94:6, mix them, add 24 g of deionized water and ball mill for 4 hours, and then vacuum dry at 110°C for 7 hours. Add 2 grams of deionized water to the dried powder, grind and stir thoroughly, and then press it into a circular blank with a diameter of 27.5 mm and a thickness of 2 mm. The blank is put into a crucible and placed in a vacuum tube furnace, and 5.000 grams of powder with the same composition and 1.1000 grams of high-purity sulfur powder are placed around it. The vacuum tube furnace was evacuated to 0.1 Pa, and then high-purity nitrogen was introduced. Under a protective atmosphere, the temperature of the tube furnace was raised to 1250° C. and kept for 4 hours, and then naturally cooled to room temperature to obtain the desired ceramic target. The ceramic material was used as the laser ablation target, and the substrate was ultrasonically cleaned for 15 minutes with...

Embodiment 3

[0033]Weigh 35.1545 grams of ZnS powder and 4.8455 grams of MgO powder according to the molar ratio ZnS:MgO=75:25, mix and add 24 grams of deionized water to ball mill for 4 hours, and then vacuum dry at 110°C for 8 hours. Add 2 grams of deionized water to the dried powder, grind and stir thoroughly, and then press it into a circular blank with a diameter of 27.5 mm and a thickness of 3 mm. The blank is put into a crucible and placed in a vacuum tube furnace, and 5.0000 grams of powder with the same composition and 2.0000 grams of high-purity sulfur powder are placed around it. The vacuum tube furnace was evacuated to 0.1 Pa, and then high-purity nitrogen was introduced. Under a protective atmosphere, the temperature of the tube furnace was raised to 750° C. and kept for 6 hours, and then naturally cooled to room temperature to obtain the desired ceramic target. The ceramic material was used as the laser ablation target material, and the substrate was ultrasonically cleaned f...

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Abstract

The invention discloses an MgZnOS quaternary ZnO alloy semi-conductor material and a preparation method thereof. Mg and S are doped with ZnO at the same time to adjust the proportion of Mg, Zn, O and S in the MgZOS to form the brand-new MgZnOS quaternary ZnO alloy semi-conductor material; the band gap of the wide bandgap semiconductor can be adjustable in a wider range (2.94 eV-3.95 eV); the semi-conductor material can be used for ultraviolet luminous devices or optical detectors. The MgZnOS monocrystal material is synthesized successfully for the first time in the world; the preparation of the MgZnOS quaternary ZnO alloy semi-conductor material has very significant meaning for developing wavelength adjustable ultraviolet light electric appliances; the MgZnOS quaternary ZnO alloy semi-conductor material can adopt various methods of conventional impulse laser ablation sediment, magnetron sputtering, and electron beam evaporation to grow; the equipment and the operation are simple in technology, and are easy to control.

Description

technical field [0001] The invention belongs to the field of photoelectric semiconductor material preparation, in particular to a MgZnOS quaternary ZnO alloy semiconductor material and a preparation method thereof. Background technique [0002] The third-generation wide bandgap semiconductor ZnO has a bandgap width of about 3.3eV and an exciton binding energy of 60meV, and has a very wide range of applications in ultraviolet light emission and photodetection. In order to achieve device applications, ZnO needs to be doped to adjust its energy band. If Mg is partially substituted for Zn to obtain MgZnO, a wider forbidden band can be obtained. MgZnO is formed by solid solution of ZnO and MgO according to certain components. When the Mg content is low, it has a hexagonal structure, and when the Mg content is high, it has a cubic structure. By changing the content of Mg, the bandgap of MgZnO can be monotonously and continuously adjustable, and the bandgap ranges from 3.26eV to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/06H01L31/0296H01L33/28
CPCC23C14/06C23C14/28H01L31/02963H01L33/285
Inventor 何云斌黎明锴邰佳丽程海玲张蕾周桃生
Owner HUBEI UNIV