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Solar cell device structure with point contact structure and preparation method thereof

A solar cell and device structure technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as battery open circuit voltage reduction and solar cell conversion efficiency reduction.

Active Publication Date: 2016-09-07
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if there is no intrinsic layer to passivate the surface of the silicon wafer, and the doped emitter or back electrode is deposited directly, the open circuit voltage of the cell will decrease due to the serious surface recombination, which in turn will reduce the conversion efficiency of the overall solar cell.

Method used

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  • Solar cell device structure with point contact structure and preparation method thereof
  • Solar cell device structure with point contact structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Such as figure 1 As shown, a solar cell device structure with a point contact structure, it has a substrate 1, an emitter 2 and a back electrode 3, the emitter 2 and the substrate 1 form an ohmic connection with a point contact structure, and the emitter 2 An intrinsic amorphous silicon layer 4 is arranged between the remaining part and the substrate 1, and an ohmic connection is also formed between the back electrode 3 and the substrate 1 with a point contact structure, and an ohmic connection is also formed between the rest part of the back electrode 3 and the substrate 1. There is an intrinsic amorphous silicon layer 4 .

[0023] Such as figure 1 As shown, the solar cell device structure with a point contact structure also includes a front transparent conductive film layer 5, a back transparent conductive film layer 6, a front metal grid 7 and a back metal grid 8, and the front transparent conductive film layer 5 is deposited on the emitter On the upper surface of ...

Embodiment 2

[0037] The structure of the solar cell device structure with a point contact structure in this embodiment is basically the same as that in Embodiment 1, except that the substrate 1 is P-type crystalline silicon, the emitter 2 is n-a-Si:H, and the back electrode 3 is p-a-Si:H. The preparation method of this embodiment is the same as the preparation method in Example 1.

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Abstract

The invention discloses a solar cell apparatus structure with a point contact structure and a preparation method of the solar cell apparatus structure. The solar cell apparatus structure with the point contact structure comprises a substrate, an emitting electrode and a back electrode, wherein the emitting electrode and the substrate form ohm connection by virtue of the point contact structure; an intrinsic amorphous silicon layer is arranged between the rest part of the emitting electrode and the substrate; the back electrode and the substrate also form ohm connection by virtue of the point contact structure; and an intrinsic amorphous silicon layer is also arranged between the rest part of the back electrode and the substrate. On the premise of keeping relatively good passivating effect, the solar cell apparatus cell structure can be used for lowering series resistance, and increasing a filling factor of the cell, so that the conversation efficiency of the solar cell is increased.

Description

technical field [0001] The invention relates to a solar cell device structure with a point contact structure and a preparation method thereof, belonging to the technical field of solar energy manufacturing. Background technique [0002] At present, when using N-type crystalline silicon as a substrate to make heterojunction solar cell devices, the intrinsic amorphous silicon film is generally used to passivate the upper and lower surfaces of crystalline silicon (substrate), and at the same time, heavily doped p-a-Si is added: H forms the emitter and n-a-Si:H forms the back electrode (BSF). Since the intrinsic layer is in an undoped state, it has a large resistance compared to the doped amorphous silicon film, which will inevitably increase the series resistance of the solar cell and reduce the fill factor of the final solar cell. However, if there is no intrinsic layer to passivate the surface of the silicon wafer, and the doped emitter or back electrode is directly deposite...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/075H01L31/18H01L31/20
CPCH01L31/022441H01L31/061H01L31/077H01L31/18H01L31/20Y02E10/547Y02E10/548Y02P70/50
Inventor 包健
Owner TRINA SOLAR CO LTD