A Method for Suppressing the Multiplication of Secondary Electrons on the Surface of a Dielectric in Transverse Magnetic Field Mode

A dielectric surface, secondary electron emission technology, applied in the direction of circuits, electrical components, waveguide devices, etc., can solve the problem that the secondary electron multiplication cannot be suppressed, and achieve a good suppression effect

Active Publication Date: 2017-05-31
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is the problem that the existing technology for suppressing the secondary electron multiplication on the surface of the medium cannot suppress the secondary electron multiplication under the transverse magnetic electromagnetic field mode

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  • A Method for Suppressing the Multiplication of Secondary Electrons on the Surface of a Dielectric in Transverse Magnetic Field Mode
  • A Method for Suppressing the Multiplication of Secondary Electrons on the Surface of a Dielectric in Transverse Magnetic Field Mode
  • A Method for Suppressing the Multiplication of Secondary Electrons on the Surface of a Dielectric in Transverse Magnetic Field Mode

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Embodiment Construction

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are the Some, but not all, embodiments are invented. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] Such as figure 1 As shown, this embodiment discloses a method for suppressing the multiplication of secondary electrons on the surface of a medium in a transverse magnetic field mode, and the method may include the following steps:

[0023] S1. According to the first intersection point of the secondary electron emission yield curve, determine the gyrofrequency Ω...

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Abstract

The invention discloses a method for restraining medium surface secondary electron multiplying in a transverse magnetic electromagnetic field mode. The method includes the steps of determining the rotation frequency of the magnetic field according to a first intersection of a secondary emission yield curve, wherein the secondary emission yield curve is determined by a medium surface material; applying the magnetic field to a medium surface according to the rotation frequency of the magnetic field, wherein the medium surface is a periodic medium surface, and the magnetic field meets the requirements that magnetic force lines of the magnetic field are parallel, the rotation frequency of the magnetic field is uniform within the preset range, and the direction of the magnetic field is perpendicular to the normal electric field direction of the transverse magnetic electromagnetic field mode, parallel to the tangent electric field direction of the transverse magnetic electromagnetic field mode and parallel to the medium surface. According to the method, by means of the means of adopting the periodic medium surface and applying the magnetic field to the periodic medium surface, the method can play a certain effect on restraining the medium surface secondary electron multiplying under different electric field conditions, and the restraining effect is better while the field intensity of the electric field is improved.

Description

technical field [0001] The invention relates to the technical field of high-power microwaves, in particular to a method for suppressing the multiplication of secondary electrons on the surface of a medium in a transverse magnetic electromagnetic field mode. Background technique [0002] High Power Microwave (HPM) refers to electromagnetic radiation with a peak power exceeding 100 MW and a frequency in the range of 1 GHz to 300 GHz. HPM has very broad application prospects in scientific research, civil and national defense fields. With the improvement of peak power and pulse width of high-power microwave devices, especially the development of high-power and miniaturized microwave devices, the breakdown of the dielectric surface in vacuum (referred to as the vacuum dielectric surface) has become a limitation for high-power microwave transmission and emission. The main bottleneck of system power improvement. [0003] The process of breakdown of the vacuum medium surface is: o...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/08
Inventor 常超李爽孙钧郭乐田武晓龙谢佳玲
Owner NORTHWEST INST OF NUCLEAR TECH
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