Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor-metal contact resistivity detection method and array substrate

A technology of metal contact and detection method, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, measuring resistance/reactance/impedance, etc., can solve problems such as poor accuracy and achieve accurate results

Inactive Publication Date: 2015-03-11
HEFEI BOE OPTOELECTRONICS TECH +1
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem of poor accuracy of the existing method for detecting the contact resistance of the active area of ​​the array substrate, and provides a simple and accurate method for detecting the contact resistance of the semiconductor layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor-metal contact resistivity detection method and array substrate
  • Semiconductor-metal contact resistivity detection method and array substrate
  • Semiconductor-metal contact resistivity detection method and array substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as Figure 1 to Figure 3 As shown, this embodiment provides a semiconductor-metal contact resistivity detection method.

[0033] Wherein, on the semiconductor layer 1 used for the above detection, at least three metal strips 2 with the same shape and size, parallel to each other, spaced apart, and opposite to each other are provided.

[0034] That is, if figure 1 , figure 2 As shown, on the semiconductor layer 1 to be detected, there are a plurality of metal strips 2, the shapes and sizes of these metals are exactly the same, and they are parallel to each other, and each metal strip 2 is arranged in sequence along the same direction, and the adjacent metal strips 2 separated by a certain distance.

[0035] The above detection methods specifically include:

[0036] S100. Optionally, if there is no metal strip 2 on the semiconductor layer 1 to be detected, the metal strip 2 is first formed on the semiconductor layer 1 through a patterning process.

[0037] S101...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor-metal contact resistivity detection method and an array substrate, belongs to the technical field of array substrate detection and can solve the problem that an existing array substrate active area contact resistivity detection method is low in accuracy. In the semiconductor-metal contact resistivity detection method, at least three metal strips which are identical in shape and size, parallel to one another and arranged oppositely at intervals are arranged on a to-be-detected semiconductor layer. The semiconductor-metal contact resistivity detection method includes determining multiple detection groups, wherein each detection group includes two metal strips, and distances between two opposite surfaces of two metal strips of different detection groups are different; sequentially supplying current between the metal strips of each detection group, and detecting voltage of the metal strips respectively; calculating semiconductor-metal contact resistivity according to current and voltage between the metal strip of each detection group. The semiconductor-metal contact resistivity detection method can be used for detecting contact resistance between an active area and a source drain electrode of a thin-film transistor of the array substrate.

Description

technical field [0001] The invention belongs to the technical field of array substrate detection, and in particular relates to a semiconductor-metal contact resistivity detection method and an array substrate. Background technique [0002] In array substrates of organic light emitting diode (OLED) display devices, liquid crystal display devices, etc., a large number of thin film transistors are provided. The active region of the thin film transistor is composed of semiconductor, and the contact resistance between the semiconductor layer (active region) and the metal source and drain has an important influence on the performance of the thin film transistor. In order to ensure product quality, the contact resistance between the active area of ​​the array substrate and the source and drain electrodes should be detected. [0003] The existing semiconductor-metal contact resistance (rate) detection method uses a commercially available four-probe contact resistance meter to direc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R27/08H01L23/544
Inventor 李纪陈传宝
Owner HEFEI BOE OPTOELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com