A method for measuring resistivity of metal thin film

Abstract

The invention provides a method for measuring the resistivity of a metal thin film. The measuring method includes the steps of: providing a semiconductor substrate with a metal thin film formed on the surface, and making an organic protective film; providing a measuring machine, and a probe on the measuring machine Moving towards the organic protective film at a first speed; the probe moves in the organic protective film at a second speed after touching the organic protective film, wherein the second speed is less than the first speed; the probe moves to the metal thin film Surface, stop moving, read the voltage and current values, so as to calculate the resistivity of the metal film. In the present invention, a layer of organic protective film is fabricated on the surface of the metal thin film. First, the probe is quickly lowered to the surface of the organic protective film at the first speed, and then the probe pierces the organic protective film at the second speed and slowly descends to the surface of the metal thin film. The use of two different probe speeds greatly reduces the chance of the metal film being punctured, improves the success rate of product testing, and shortens the measurement cycle.

Description

technical field [0001] The invention relates to the field of semiconductor testing, in particular to a method for measuring the resistivity of metal thin films. Background technique [0002] Thin film materials are the basic materials of microelectronics technology. Generally speaking, the film is artificially fabricated with a thickness of 1 μm (10 - 6 m) The following solid films and thin films are all prepared on a substrate, such as glass, semiconductor silicon, etc. Since the thickness of the film (referred to as the film thickness) is very thin, the film thickness largely affects the electrical properties, optical properties, magnetic properties, mechanical properties, ferroelectric properties and other physical properties of the film material. The phenomenon that the physical properties of thin film materials are affected by the film thickness is called the size effect. The size effect determines that some physical and chemical properties of thin-film materials ar...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for measuring the resistivity of a metal film, which is used to solve the problem in the prior art that the metal film is easily punctured by a probe and the resistivity of the metal film cannot be measured. question

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