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Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature

A solar cell and heterojunction technology, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve problems such as unsuitability for large-scale industrial production, film surface damage, complex manufacturing process, etc., and achieve good passivation effect , reduce damage, simplify the effect of combining steps

Active Publication Date: 2015-03-18
IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD
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Problems solved by technology

This technology will cause damage to the surface of the film due to the etching step, and the manufacturing process is complicated and costly, so it is not suitable for large-scale industrial production

Method used

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  • Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature
  • Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature
  • Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature

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Embodiment Construction

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0031] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented by other methods different from those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0032] The present invention provides a process for preparing a heterojunction solar cell with no grid on the front at low temperature. The PECVD method is used at a relatively low temperature to deposit N-type and P-type amorphous silicon films that are alternately distributed in an interdigitated manner, and The N-type and P-type amorphous silicon films are respectively deposited by using a combination of masks and different...

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Abstract

The invention provides a process for preparing a heterojunction solar cell without a grid electrode on the front surface at a low temperature. P type and N type amorphous silicon membranes which are alternately distributed in a cross finger form are deposited by a PECVD (Plasma Enhanced Chemical Vapor Deposition) method at a relatively low temperature, and the P type and N type amorphous silicon membranes are respectively deposited by combining a mask plate and different shielding plates, so that damage caused by an etching step in the prior art is avoided; meanwhile, the mask plate and the shielding plates are not required to be frequently cleaned, so that the step of combining an HIT (Heterojunction with Intrinsic Thin film) cell and an IBC (Interdigitated back contact) cell is also simplified, and the process is suitable for industrial production.

Description

technical field [0001] The invention relates to the field of high-efficiency solar cells, in particular to a process for preparing a heterojunction solar cell without a front grid at low temperature. Background technique [0002] Heterojunction solar cells (HJ) and back-contact solar cells (IBC) are currently two popular high-efficiency cells, and their photoelectric conversion efficiencies can reach more than 24%, which is much higher than the current 18-19% of ordinary crystalline silicon cells. conversion efficiency. However, for HJ cells, the grid design on the light incident surface reduces the light-absorbing area of ​​the cell, thereby reducing the short-circuit current and affecting the final conversion efficiency of the solar cell. The IBC battery basically eliminates the shading loss of the front grid electrode in the above-mentioned HJ battery, makes full use of the light, and improves the battery efficiency. However, in the prior art, the preparation of the IBC ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/202Y02E10/50Y02P70/50
Inventor 胡宏逵耿茜吴科俊王燕玲
Owner IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD
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