Preparation method of SiC/graphene core-shell structured nano material

A technology of core-shell structure and nanomaterials, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as high content of impurity elements and harsh reaction conditions

Active Publication Date: 2015-04-08
HARBIN INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention solves the problem that the existing SiC nano-core-shell structure materials have harsh reaction conditions and high content of impurity elements in the core-shell structure materials, and provides a method for preparing SiC / graphene core-shell structure nanomaterials

Method used

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  • Preparation method of SiC/graphene core-shell structured nano material
  • Preparation method of SiC/graphene core-shell structured nano material
  • Preparation method of SiC/graphene core-shell structured nano material

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specific Embodiment approach 1

[0031] Specific embodiment one: the preparation method of the SiC / graphene core-shell structure nano-material in this embodiment is implemented according to the following steps:

[0032] 1. Put the SiC nanowires in a heating furnace and heat them to 400-650°C for carbon removal treatment, and then soak the heated SiC nanowires in HF solution for 20-26 hours to obtain pretreated SiC nanowires;

[0033] 2. Use deionized water to repeatedly rinse the pretreated SiC nanowires, filter and put them in a drying oven to dry, and then obtain the required SiC nanowires;

[0034] 3. Weigh a certain amount of Ag powder;

[0035] Four, punch holes on the graphite paper to obtain the graphite paper after punching holes, lay Ag powder, graphite paper after punching holes, SiC nanowires and graphite paper on the bottom of the graphite crucible successively, cover the crucible lid, and then graphite The crucible is placed in an atmosphere pressure sintering furnace, and kept at a temperature ...

specific Embodiment approach 2

[0037] Embodiment 2: This embodiment differs from Embodiment 1 in that the SiC nanowires in step 1 are replaced with other SiC materials (such as powder, fiber, etc.). Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0038] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the concentration of the HF solution in step 1 is 5 vol% to 10 vol%. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2. The function of soaking in the HF solution in this embodiment is to remove the oxidized SiO on the surface of the nanowires. 2 .

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Abstract

The invention discloses a preparation method of a SiC/graphene core-shell structured nano material, which comprises the following steps: Al, feeding SiC (powder, fiber or nanowire, and the like) into a heating furnace, after the SiC is heated to 400-650 DEG C, carrying out carbon removal treatment, and soaking the heated SiC material into a HF solution for 20-26 hours, so that pretreated SiC is obtained; A2, repeatedly washing the pretreated SiC by using deionized water, filtering, and drying SiC into a drying oven so that SiC required by experiments is obtained; A3, preparing metal powder or compounds thereof required by experiments; and A4, drilling holes i9n graphite paper so as to obtain drilled graphite paper, sequentially putting the metal powder or compounds thereof, the drilled graphite paper, the SiC and graphite paper at the bottom of a graphite crucible, covering a graphite cover, then putting the graphite crucible into a gas-press-sintering furnace, and carrying out heat preservation for 1-4 hours at a temperature of 1200-1500 DEG C, so that the SiC/graphene core-shell structured nano material is obtained.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a method for preparing a SiC / graphene core-shell nanomaterial. Background technique [0002] Among many semiconductor materials, wide-bandgap silicon carbide (SiC) semiconductor materials have attracted much attention due to their excellent mechanical properties, high thermal conductivity, and strong chemical inertness. At the same time, one-dimensional SiC nanomaterials exhibit some characteristics different from bulk materials due to the limitation of nanometer size in two dimensions of space, so they have unique characteristics in mechanics, electricity, optics, field emission, photocatalysis, etc. different properties. However, if only SiC nanowires are used to make connecting wires or integrated circuits, it does not meet the requirements of high performance. Since the discovery of graphene in 2004, it has attracted extensive attention from researchers due to its unique ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C01B31/04B82Y30/00B82Y40/00
Inventor 黄小萧闫旭温广武张晓东夏龙费连东
Owner HARBIN INST OF TECH
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