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A growth method of doped zinc oxide conductive film for stress relief

A conductive film and stress release technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as excessive stress accumulation and cracks in the film, and achieve the effects of improving reliability, preventing cracking, and promoting long-term development

Inactive Publication Date: 2018-12-07
GUANGDONG DELI PHOTOELECTRIC
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Problems solved by technology

However, in batch trial production, since the zinc oxide transparent conductive film is grown by the MOCVD method, it is easy to cause excessive internal stress accumulation of the film and cause cracks in the chip manufacturing process. Research focus within the chip industry

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  • A growth method of doped zinc oxide conductive film for stress relief
  • A growth method of doped zinc oxide conductive film for stress relief
  • A growth method of doped zinc oxide conductive film for stress relief

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Embodiment Construction

[0023] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0024] Such as figure 1 As shown, the doped zinc oxide conductive film provided by the invention is grown by MOCVD, and the specific steps are as follows:

[0025] 1. Use a mixed solution of concentrated sulfuric acid, hydrogen peroxide, and plasma water at a ratio of 5:1:1 to clean the LED epitaxial wafer for 10 minutes, and dry it;

[0026] 2. Put it into the reaction chamber of the LP-MOCVD equipment, and then run the growth program. At this time, the internal pressure of the chamber is 20torr, and the rotation speed of the graphite disk increases from 0 r / min to 650-900 r / min within 15-20min. time, simultaneously pass through N 2 , Ar or a mixture of the two gases into the reaction chamber, and the chamber is heated to 400-500°C under the atmosphere, and the LED epitaxial wafer is processed for 5-15 minutes;

[0027] 3. Pass the doped Al so...

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Abstract

The invention discloses a growth method of a stress release zinc oxide-doped transparent conductive film. The growth method is characterized in that three oxide-doped conductive films grow on an LED (light-emitting diode) epitaxial slice; the three oxide-doped conductive films are sequentially divided into a doped ZnO contact layer, a doped ZnO conductive layer and a doped ZnO coarse layer according to the growth order; doping element(s) is / are one or more of Al, In, Ga and B. According to the growth method disclosed by the invention, the growth mode that the zinc oxide film is changed by adjusting the internal pressure of an MOCVD (metal-organic chemical vapor deposition) cavity, a zinc source, the doping source flow and the temperature, thus a relatively large difference is formed on the film crystal structure; the stress accumulated in the film is effectively released; the cracking phenomenon of the transparent conductive film in a chip process is reduced and prevented; meanwhile, the thickness of the grown film can be accurately controlled; the light extraction efficiency of an LED chip can be effectively improved.

Description

technical field [0001] The invention relates to the field of preparation of LED chip transparent conductive film growth, in particular to a method for growing a stress-relieving doped zinc oxide conductive film on the LED chip. Background technique [0002] Light-emitting diodes (LEDs) have many advantages such as small size, long life (50,000 hours), high luminous efficiency, and energy saving, and have been widely used in daily life. The main material of LED is gallium nitride, whose refractive index is 2.5 much higher than that of air, which makes most of the light inside the LED chip unable to exit. In order to improve the light extraction efficiency of gallium nitride-based LEDs, oxidation Indium tin conductive film, but because the film uses In, a scarce precious metal material, the LED industry may be unsustainable after the reserves are exhausted. At present, the LED chip industry has adopted a doped zinc oxide conductive film to replace indium tin oxide (ITO). The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L33/42
CPCH01L21/02697H01L33/42
Inventor 王波郝锐叶国光李方芳
Owner GUANGDONG DELI PHOTOELECTRIC
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