SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method

Abstract

The invention discloses an SiC MOSFET half-bridge circuit driver and a half-bridge circuit drive method. The SiC MOSFET half-bridge circuit driver comprises a negative voltage generating circuit and a crosstalk removing circuit which are connected in series. The crosstalk removing circuit comprises an MOSFET switch tube and an RC parallel circuit II connected with the MOSFET switch tube in series. The RC parallel circuit II comprises a resistor R2 and a capacitor C2 which are connected in parallel. The SiC MOSFET half-bridge circuit driver and the half-bridge circuit drive method have the advantages of reducing the use of negative voltage power supply and saving the cost by generating negative voltage through a passive component for the drive circuit and effectively solving the problem of negative voltage peak of drive signals due to half-bridge unit crosstalk and accordingly reducing the risk of damage to an SiC device due to the fact that the negative voltage of a gate source electrode exceeds a limit value.

Description

technical field [0001] The invention relates to a SiC MOSFET half-bridge circuit driver with negative voltage shutdown and a half-bridge circuit driving method. Background technique [0002] As a wide bandgap semiconductor material, SiC material has good physical and chemical properties such as large band gap, high breakdown voltage, and high thermal conductivity. In recent years, with the increasing maturity of SiC materials, the application of SiC devices in the field of power electronics has attracted widespread attention. Among them, SiC MOSFET is favored by researchers for its high withstand voltage and high switching frequency. Due to the inherent characteristics of SiC MOSFET, the design of its drive circuit is different from that of Si material MOSFET. On the one hand, in order to increase the switching frequency of the device and reduce the off time, negative voltage needs to be considered in the design of the driver. On the other hand, the negative voltage that t...

AI Technical Summary

Problems solved by technology

On the one hand, in order to increase the switching frequency of the device and reduce the off time, negative voltage needs to be considered in the design of the driver. On the other hand, the negative voltage that the gate and source of SiC MOSFET can withstand is small, so the negative voltage cannot exceed its maximum Negative pressure value

In addition, since conventional two-level inverters are based on half-bridge circuit units, the mutual influence of the parasitic parameters of the two switching tubes of the half-bridge circuit under high dv / dt conditions, that is, crosstalk, cannot be ignored

[0003] At present, the design of most drivers is to add a negative voltage power supply on the basis of the original Si MOSFET driver, which increases the design cost, and does not consider the influence of the half-bridge circuit crosstalk on the driving signal, resulting in gate-source negative voltage spikes beyond the maximum range that SiC MOSFETs can withstand

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