Target machining method

A technology of mechanical processing and target material, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems of particularly obvious side effects, serious deformation of the target material, and inability to use it
CN104561890BActive Publication Date: 2017-03-15KONFOONG MATERIALS INTERNATIONAL CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2017-03-15

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Abstract

The invention relates to a machining method for a target material. The machining method for the target material comprises the following processing steps: levelling planes of a sputtering surface and the back face of a target material blank, and processing each side face of the target material blank so that thickness of the target material blank is the same as the predetermined thickness, and plane dimensions of the sputtering surface and back face of the target material blank are the same as the predetermined plane dimensions, wherein the levelling treatment process on the sputtering surface and back face of the target material blank comprises a primary plane levelling process and a secondary plane levelling process which are carried out on the sputtering surface and back face of the target material blank along the first direction and a finish machining plane levelling process carried out on the sputtering surface. By adopting the technical scheme, a multi-step levelling process is carried out on the sputtering surface or back face along the first direction, stress produced inside the target material and vibration produced to the target material by machining in a machining process can be effectively alleviated, so that the defects of deformation and the like can not be formed on the target material blank, quality of a machined target material is improved, and yield of the machined target materials is increased.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a machining method for a target. Background technique

[0002] Magnetron sputtering is a substrate coating process that uses charged particles to bombard the target, so that the target atoms escape from the surface and are evenly deposited on the substrate. Magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, good film-substrate bonding force, and excellent metal coating uniformity and strong controllability. It is widely used in the coating process of electronic and information industries such as integrated circuits, information storage, liquid crystal display, laser memory, electronic control devices, etc.

[0003] With the rapid development of the electronic information industry, such as in the manufacturing process of integrated circuits, the size of the chip subs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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