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SEM sample preparation method

A sample and control grid technology, applied in the preparation of test samples, electrical components, electrical solid devices, etc., can solve the problems of difficult to ensure the integrity of the target, easy to miss the target, and low contrast of the sample, so as to avoid insufficient contrast and improve The effect of preparation efficiency and easy operation

Active Publication Date: 2017-05-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing SEM samples, which is used to solve the problems that the samples prepared in the prior art have low contrast, are easy to miss the target, and are difficult to ensure the integrity of the target

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Embodiment Construction

[0050] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0051] see Figure 1 to Figure 10 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...

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Abstract

The invention provides a method for preparing SEM samples, which at least includes the following steps: S1: providing a sample to be tested; S2: removing the metal layer, and placing the sample to be tested after removing the metal layer into a scanning electron microscope ; S3: Use a scanning electron microscope electron beam to scan the preset area of ​​the sample to be tested after removing the metal layer, so that the area is carbonized; S4: Soak the structure obtained in step S3 in hydrogen peroxide to remove the metal S5: Soak the structure obtained in step S4 in a hydrofluoric acid solution to remove part of the interlayer dielectric layer; S6: Rinse the structure obtained in step S5 with water so that the word lines, control gates and erase gates are The water washes away. The present invention removes unnecessary structures around the floating gate and enhances the contrast of SEM images; in the preparation process of samples, SEM electron beam scanning and chemical processing are mainly used, which improves the hit rate of the target and can ensure the integrity of the target and the efficiency of sample preparation. high.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for manufacturing an observation sample, in particular to a method for preparing an SEM sample. Background technique [0002] Integrated Circuits (Integrated Circuit, IC) follow the evolution of Moore's Law, the integration level is continuously improved, and the feature size is continuously reduced. In the ever-shrinking device structure, the defects that cause device failure are getting smaller and smaller. Although various defects in most manufacturing processes can be caught by defect detection systems, it is impossible to tell the producer why these defects occur. Scanning Electron Microscope (SEM) is the most commonly used failure analysis equipment. SEM can be used to observe the sample cross section or surface in a subtle way. The magnification of SEM can range from thousands of times to hundreds of thousands of times, and the resolution can reach 3nm, ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28H01L27/11517H10B41/00
Inventor 杨梅李日鑫高保林赵利利王倩
Owner SEMICON MFG INT (SHANGHAI) CORP