Thin film transistor and preparing method for thin film transistor

Abstract

The invention provides a thin film transistor and a preparing method for the thin film transistor. The thin film transistor comprises a substrate, a grid, a grid insulating layer, a first semiconductor layer, an etching barrier layer, a second semiconductor layer, a source and a drain, wherein the grid, the grid insulating layer, the first semiconductor layer, the etching barrier layer and the second semiconductor layer are sequentially arranged on the surface of the substrate in a stacked mode, and the source and the drain cover the two ends of a second semiconductor respectively. The etching barrier layer is provided with a first penetrating hole and a second penetrating hole, wherein the first penetrating hole and the second penetrating hole correspond to the source and the drain respectively, the source is connected with the first semiconductor layer through the first penetrating hole, and the drain is connected with the second semiconductor layer through the second penetrating hole. The thin film transistor can effectively increase on-state currents of the thin film transistor and has higher on-off speed.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a thin film transistor and a preparation method of the thin film transistor. Background technique [0002] A thin film transistor (thin film transistor, TFT), as a switching element, is widely used in electronic devices such as liquid crystal display devices. Thin film transistors have attracted extensive attention because they can be applied to high resolution (high pixels per inch, high PPI) display devices. For thin film transistors, a high on-state current can increase the switching speed of the transistor. In order to increase the on-state current of the thin film transistor, it is common practice to increase the width of the channel in the thin film transistor or decrease the length of the channel. However, increasing the channel width of the thin film transistor will reduce the aperture ratio of the liquid crystal display device; reducing the channel length of the t...

AI Technical Summary

Problems solved by technology

However, increasing the width of the channel in the thin film transistor will reduce the aperture ratio of the liquid crystal display device; reducing the length of the channel of the thin film transistor will cause the short channel effect

To sum up, the on-state current of thin film transistors in the prior art is relatively small, resulting in slow switching speed of thin film transistors

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